The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

9:15 AM - 9:30 AM

[18a-A22-2] Mapping of Ni/n-SiC Schottky contacts using internal photoemission microscopy

○Yuhei Kihara1, shingo Yamamoto1, Kenji Shiojima1 (Univ. of Fukui1)

Keywords:SiCショットキー接触,2次元評価,障壁高さ