The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

9:30 AM - 9:45 AM

△ [18a-A22-3] Mapping of crystalline of n-GaN Schottky contacts using scanning internal photoemission microscopy --influence of surface structure--

○Shingo Yamamoto1, Yuhei Kihara1, Kenji Shiojima1 (Univ. of Fukui1)

Keywords:GaN,ショットキー接触,二次元評価