Temperature Dependence of TiN-Anode GaN Schottky Barrier Diode Characteristic for Microwave Power Rectification

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

9:45 AM - 10:00 AM

^○Ryota Fujihara¹, Yuki Itai¹, Qiang Liu¹, Liuan Li¹, Yasuo Ohno², Jin-Ping Ao¹ (Tokushima Univ.¹, e-Device Inc.²)

Keywords:窒化物半導体