The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18a-A22-1~12] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 9:00 AM - 12:15 PM A22 (E314)

10:15 AM - 10:30 AM

[18a-A22-6] Evaluation of interface states between SiN and AlGaN by X-ray photoelectron spectroscopy under bias voltages

○Tomohito Kawashima1, Reiko Saito1, Hidehiko Yabuhara1 (Toshiba Corporate Manufacturing Engineering Center1)

Keywords:XPS,AlGaN,界面準位