Growth and Characterization of Eu-Doped GaN by Low-Temperature Organometallic Vapor Phase Epitaxy

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

9:15 AM - 9:30 AM

^○Wanxin ZHU¹, Timmerman Dolf¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Keywords:Eu-Doped GaN