Oral presentation

[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[18a-A24-1] Formation of AlN thin films by direct nitridation of Al thin films in NH3 and N2 gas

^○Shun Kajihara¹, Masato Hamasaki¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

9:15 AM - 9:30 AM

▲ [18a-A24-2] Growth and Characterization of Eu-Doped GaN by Low-Temperature Organometallic Vapor Phase Epitaxy

^○Wanxin ZHU¹, Timmerman Dolf¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

9:30 AM - 9:45 AM

△ [18a-A24-3] Formation of new Eu optical center by Zn,O-codoping in Eu-doped GaN

^○Masaaki Matsuda¹, Wanxin Zhu¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ¹)

9:45 AM - 10:00 AM

△ [18a-A24-4] Enhancement of Eu photoluminescence intensity in Eu-doped GaN by Localized Surface Plasmon Resonance

^○(M2)Tomohiro Inaba¹, Takanori Kojma¹, Atsusi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

10:00 AM - 10:15 AM

△ [18a-A24-5] Characterization of energy transfer efficiency in Eu-doped GaN by two-wavelength excited photoluminescence

^○Kohei Okada¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Takanori Kojima¹, Atsushi Koizumi¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

10:15 AM - 10:30 AM

[18a-A24-6] Effects of Strain on Mutual Energy Transfer between Eu Luminescent Centers in Eu-Doped GaN Grown on Various Substrates

^○Atsushi Koizumi¹, Ryuta Wakamatsu¹, Dolf Timmerman¹, Kazuteru Tanaka¹, Takanori Kojima¹, Yasufumi Fujiwara¹ (Osaka Univ.¹)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-A24-7] Population transfer to higher states in Er2O3 thin films

^○Takehiko Tawara^1,2, Hiroo Omi^1,2, Adel Najar¹, Reina Kaji³, Satoru Adachi³, Hideki Gotoh¹ (NTT Basic Research Labs.¹, NTT Nanophotonics Center², Hokkaido Univ.³)

11:00 AM - 11:15 AM

[18a-A24-8] Energy transfer and nonradiative processes in (Er_xSc_1-x)₂O₃ thin films

^○Yoshihiro Kawakami¹, Reina Kaji¹, Satoru Adachi¹, Takehiko Tawara^2,3, Hiroo Omi^2,3 (Hokkaido Univ.¹, NTT Basic Research Labs.², NTT Nanophotonics Center³)

11:15 AM - 11:30 AM

[18a-A24-9] Phase relaxation properties of hyperfine sublevels in ¹⁶⁷Er³⁺ ions doped in an Y₂SiO₅ crystal

^○Daisuke Hashimoto¹, Kaoru Shimizu² (NTT BRL¹, NTT BRL²)

11:30 AM - 11:45 AM

▲ [18a-A24-10] Structural Characterization and Luminescence Properties of ErxSc2-xSi2O7 Prepared by RF Sputtering

^○Adel Najar¹, Hiroo Omi^1,2, Takehiko Tawara^1,2 (NTT BRL¹, NPC²)

11:45 AM - 12:00 PM

[18a-A24-11] Concentration dependence of occupation sites of Er³⁺ ions in (Er_1-xSc_x)₂O₃ films

^○Hiroo Omi^1,2, Takehiko Tawara^1,2, Reina Kaji³, Satoru Adachi³, Hideki Gotoh¹ (NTT BRL¹, NTT NPC², Hokkaido Univ.³)

12:00 PM - 12:15 PM

[18a-A24-12] Photoluminescence from Eu²⁺ ions doped in sputter-deposited ZnO:Eu films

^○Housei Akazawa¹, Hiroyuki Shinojima² (NTT MI Labs.¹, Kurume NCT²)

12:15 PM - 12:30 PM

[18a-A24-13] Photoluminescence and local structure analysis of Nd-Al co-doped TiO₂ thin films

^○Yutaka Aizawa¹, Shuji Komuro², Norie Hirao³, Xinwei Zhao¹ (Tokyo Univ. of Science¹, Toyo Univ.², JAEA³)

Poster presentation

[18p-PB8-1~17] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB8 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB8会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[18p-PB8-1] Fabrication and characterization of strained Ge microbridge

^○Hiroyuki Takizawa¹, Xuejun Xu¹, Yasuhiro Shiraki¹, Kentarou Sawano¹, Takuya Maruizumi¹ (Tokyo City University¹)

1:30 PM - 3:30 PM

[18p-PB8-2] Band-edge luminescence of TlGaSe₂

^○Masashi Hagiwara¹, Raul Paucar¹, YongGu Shim², Kazuki Wakita¹, Oktay Alekperov³, Arzu Najafov³, Nazim Mamedov³ (Chiba Inst. of Tech.¹, Osaka Pref. Univ.², Azerbaijan Inst. Phys.³)

1:30 PM - 3:30 PM

[18p-PB8-3] Simulation of Gaussian beam propagation in medium with two-photon absorption

^○Shuhei Ri¹, Hiroyuki Bando¹, Masaki Oishi¹, Toshio Matsusue¹ (Chiba Univ.¹)

1:30 PM - 3:30 PM

[18p-PB8-4] Annealing Characterization of Up Conversion Phosphor Fabricated by MOD Methods

^○Toshihiro Nonaka¹, Keito Oyama¹, Isamu Shoubu¹, Takanori Kubo¹, HomNath Luitel³, Takanori Watari², Shin-Ichi Yamamoto¹ (Ryukoku Univ.¹, Saga Univ.², Shinwa-Biso Co.,Ltd.³)

1:30 PM - 3:30 PM

△ [18p-PB8-5] Photoluminescence Properties of YAG:Ce³⁺ Nanoparticles/Polymer Composite Films

^○(M1)Yuta Sasaki¹, Satoru Takeshita¹, Tetsuhiko Isobe¹ (Keio Univ.¹)

1:30 PM - 3:30 PM

[18p-PB8-6] Advanced Phosphor Synthesis Using Microreactor Technology and Their Application to Wavelength Conversion Layer

^○Hiroshi Okura¹, Ryosuke Sakata², Kenji Yamashina², Ryohei Komiyama², Hidetoshi Miyashita², Sang-Seok Lee², Koutoku Ohmi² (Merck Ltd.¹, Tottori Univ.²)

1:30 PM - 3:30 PM

[18p-PB8-7] Fabrication of (Ba,Eu)Si₂S₅ Phosphor on Si Nanostructures

^○Haruka Imai¹, Yasushi Nanai¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

1:30 PM - 3:30 PM

[18p-PB8-8] Characterization of non-radiative recombination centers in Ba3Si6O12N2:Eu2+ phosphor by two-wavelength excited photoluminescence

^○Tingting Li¹, Takeshi Fukuda¹, Zentaro Honda¹, Norihiko Kamata¹, Tomoyuki Kurushima² (Saitama Unversity¹, Mitsubishi Chemical Group²)

1:30 PM - 3:30 PM

[18p-PB8-9] First-principles Calculations of Absorption Spectra for Nitride Phosphors Doped with Ce³⁺ and Eu²⁺

^○Hikaru Tamura¹, Shinta Watanabe¹, Kazuyoshi Ogasawara¹ (Kwansei Gakuin Univ¹)

1:30 PM - 3:30 PM

[18p-PB8-10] First-principles Calculation of 4f-5d transition Spectra for Ce³⁺-Doped MS(M=Mg, Ca, Sr, Ba)

^○Takahiro Matsuguma¹, Shinta Watanabe¹, Kazuyoshi Ogasawara¹ (Kwanseigakuin Univ.¹)

1:30 PM - 3:30 PM

[18p-PB8-11] Photoluminescence properties of double-perovskite phosphors including ns⁰ cations

^○Yasushi Sato¹, Masato Kakihana² (Okayama Univ. Sci.¹, Tohoku Univ.²)

1:30 PM - 3:30 PM

[18p-PB8-12] Cathodoluminescent properties and emission mechanism of ultra violet emitting ZnAl₂O₄ phosphor

^○Takeaki Ishinaga¹, Hiroko Kominami¹, Yoichiro Nakanishi², Kazuhiko Hara² (Shizuoka Univ.¹, Shizuoka Univ.²)

1:30 PM - 3:30 PM

[18p-PB8-13] Investigation of Ce-ion emission centre in complex borate under air firing synthesis

^○Tadashi Ishigaki¹, Takumi Kikuchi², Kazuyoshi Uematsu², Kenji Toda², Mineo Sato², Koutoku Ohmi^1,3 (TEDREC¹, Niigata Univ.², Tottori Univ.³)

1:30 PM - 3:30 PM

[18p-PB8-14] Analysis of luminescent centers in Eu-activated phosphors using X-ray excited optical luminescence (XEOL)

^○Tetsuo Honma¹, Takashi Kunimoto², Yoshiko Fujita² (JASRI¹, Tokubun Univ.²)

1:30 PM - 3:30 PM

[18p-PB8-15] Annealing tests on high pressure-phase of ultraviolet SrO:Ce phosphor

^○(P)Keiji Komatsu¹, Atsushi Nakamura^1,2, Shigeo Ohshio¹, Ikumi Toda¹, Hiroyuki Muramatsu¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹, Chubu Chelest Co., Ltd.²)

1:30 PM - 3:30 PM

[18p-PB8-16] Preparation of Europium-doped GaN grown on GaAs(100) by radical nitrogen assisted compound-source MBE and conventional MBE

^○Yuki Koyama¹, Shinji Yudate¹, Akira Miyata¹, Sho Shirakata¹ (ehime Univ.¹)

1:30 PM - 3:30 PM

[18p-PB8-17] Preparation of Europium-doped GaN and AlGaN films grown by radical nitrogen assisted compound-source MBE

^○Sinji Yudate¹, Yuki Koyama¹, Akira Miyata¹, syo Shirakata¹ (ehime Univ.¹)

Oral presentation

[19a-A26-1~12] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 9:00 AM - 12:15 PM A26 (E319)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[19a-A26-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

^○Keisuke Nishida¹, Xuejun Xu¹, Koki Takabayashi¹, Keisuke Yoshida¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo city Univ.¹)

9:15 AM - 9:30 AM

[19a-A26-2] Complementarity of IR-excited Auger electron emission to thermal excited emission in Si-nc:P

^○Masashi Ishii¹, Iain Crowe², Matthew Halsall², Andrew Knights³, Russell Gwilliam⁴, Bruce Hamilton² (NIMS¹, Univ. Manchester², McMaster Univ.³, Univ. Surrey⁴)

9:30 AM - 9:45 AM

[19a-A26-3] Fabrication of (NH4)2SiF6 particles with an innovative chemical growth method

^○Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Graduate School of Denki Univ.¹, National Institute for Materials Science²)

9:45 AM - 10:00 AM

△ [19a-A26-4] Fabrication of silicon nanoparticles by a stirrer

^○Shun Kitazawa¹, Keisuke Sato¹, Naoki Fukata², Kenji Hirakuri¹ (Graduate School of Denki Univ.¹, National Institute for Materials Science²)

10:00 AM - 10:15 AM

△ [19a-A26-5] Valley-selective resonance optical excitation in compound semiconductors

^○Tetsuya Sakamoto¹, Yuhsuke Yasutake^1,2, Susumu Fukatsu¹ (UTokyo¹, JST-PRESTO²)

10:15 AM - 10:30 AM

△ [19a-A26-6] Observation of the sub-picosecond spin relaxation in InGaAsP bulk

^○Ryo Harasawa¹, Naoki Yamamoto¹, Hao Wu¹, Takanori Aritake¹, Shulong Lu², Lian Ji², Atsushi Tackeuchi¹ (Waseda Univ.¹, SINANO-CAS²)

10:30 AM - 10:45 AM

△ [19a-A26-7] Spin relaxation in Zn doped GaAs grown by VGF method

^○Yuya Yasue¹, Kazuki Honda¹, Masaki Asakawa¹, Atsushi Tackeuchi¹ (Waseda Univ.¹)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

[19a-A26-8] Effects of electric field on coupled spin states in InGaAs quantum dots and wells

^○Junichi Takayama¹, Takayuki Kiba¹, Takafumi Yamamura¹, Yuzuru Nomura¹, Subagyo Agus¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Hokkaido Univ.¹)

11:15 AM - 11:30 AM

[19a-A26-9] EL properties of LEDs using metallic ferromagnetic electrodes and InGaAs-based quantum structures

^○Yuzuru Nomura¹, Junichi Takayama¹, Takayuki Kiba¹, Subagyo Agus¹, Takafumi Yamamura¹, Xiaojie Yang¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (Graduate School of IST, Hokkaido University¹)

11:30 AM - 11:45 AM

[19a-A26-10] Estimation of the imaginary parts of the third-order nonlinear susceptibility tensor using Z-scan technique with elliptical polarization

^○(M2)Hikaru Hara¹, Hiroyuki Bado¹, Tomohisa Shinozaki¹, Masaki Oishi¹, Toshio Matsusue¹ (Chiba Univ.¹)

11:45 AM - 12:00 PM

[19a-A26-11] Polarization dependence of two-photon absorption with circular- and linear-polarized two beams on InP(1\bar{1}0)

^○(D)Masaki Oishi¹, Hiroyuki Bando¹, Takahide Mishina¹, Toshio Matsusue¹ (Chiba Univ.¹)

12:00 PM - 12:15 PM

[19a-A26-12] Analysis of GaInP raman spectra considering fano interference

^○(M2)Hironori Sakamoto¹, Kazuyuki Ishihara¹, Bei Ma¹, Morita Ken¹, Ishitani Yoshihiro¹ (Chiba univ.¹)

Oral presentation

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 1:45 PM - 6:45 PM A26 (E319)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:15～13:45 （12:15 PM - 1:45 PM）

1:45 PM - 2:00 PM

[19p-A26-1] Emission Property of Single Particle Phosphor

^○Takashi Takeda¹, Naoto Hirosaki¹, Shiro Funahashi¹, Rong-Jun Xie¹ (NIIMS¹)

2:00 PM - 2:15 PM

[19p-A26-2] Discovery of Novel Oxynitride Phosphor by Single-Particle-Diagnosis Approach

^○(PC)Shiro Funahashi¹, Naoto Hirosaki¹, Takashi Takeda¹, Rong-Jun Xie¹ (NIMS¹)

2:15 PM - 2:30 PM

[19p-A26-3] Sr/Ba ratio dependences of luminous efficiency in blue phosphors (Sr, Ba)Al₂Si₃O₄N₄:Eu²⁺ for near ultra-violet excitataion

^○Ryo Yoshimatsu^1,2, Shiro Funahashi⁴, Tadashi Ishigaki³, Suzuya Yamada², Naoto Hirosaki⁴, Koutoku Ohmi¹ (Tottori univ.¹, DENKA², TEDREC³, NIMS⁴)

2:30 PM - 2:45 PM

[19p-A26-4] Cathodoluminescence Analysis of LaAl(Si_6-zAl_z)(N_10-zO_z)(z~1):Ce³⁺ Blue Phosphor

^○Kohsei Takahashi¹, Benjamin Dierre¹, Yujin Cho¹, Takashi Sekiguchi¹, Takashi Takeda¹, Rong-Jun Xie¹, Naoto Hirosaki¹ (NIMS¹)

2:45 PM - 3:00 PM

▼ [19p-A26-5] Conditions and mechanism for crystal growth of Si-doped AlN powders

^〇Yujin Cho^1,2, Benjamin Dierre¹, Takashi Takeda¹, Kohsei Takahashi¹, Naoki Fukata^1,2, Naoto Hirosaki¹, Takashi Sekiguchi^1,2 (NIMS¹, Tsukuba Univ.²)

3:00 PM - 3:15 PM

▲ [19p-A26-6] Cathodoluminescence of AlN:Mn²⁺

Xiaojun Wang¹, ^○Rongjun Xie¹, Benjamin Dierre¹, Takashi Takeda¹, Takayuki Suehiro¹, Naoto Hirosaki¹, Takashi Sekiguchi¹ (NIMS¹)

3:15 PM - 3:30 PM

[19p-A26-7] Influence of surface states of HF-treated oxynitride phosphors on the luminescence property

^○Nao Shinoda¹, Masako Koizumi¹, Masakuni Ikagawa¹, Nobuaki Makino¹, Yumi Fukuda², Daichi Usui³ (Corporate Manufacturing Engineering Center Toshiba Corp.¹, Corporate R&D Center Toshiba Corp.², Toshiba Materials Co.,Ltd.³)

3:30 PM - 3:45 PM

[19p-A26-8] Fabrication and optical characterization of p-ZnO:Cu,N/n-SiC heterojunctions

^○(M1)Yu Hirano¹, Jun-ichi Iwata¹, Hiroki Sase¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

3:45 PM - 4:00 PM

△ [19p-A26-9] Growth of GaSe crystals by liquid phase epitaxy under controlled Se vapor pressure and its evaluation

^○Kohei Suzuki¹, Yuki Nagai¹, Kunihiko Yamamoto¹, Kensaku Maeda¹, Kyosuke Saito¹, Yutaka Oyama¹ (Tohoku Univ.¹)

Break 16:00～16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[19p-A26-10] Development of red-emitting Eu²⁺ doped Sr-SiAlON phosphor

^○Daichi Usui¹, Naotoshi Matsuda¹, Hirofumi Takemura¹, Yumi Fukuda², Kumpei Kobayashi¹ (Toshiba Materials Co.,Ltd.¹, Toshiba Corp.²)

4:30 PM - 4:45 PM

[19p-A26-11] Crystal and electronic structure of Sr₂Si₇Al₃ON₁₃:Ce

^○Kunio Ishida¹, Graham King², Katharine Page², Yumi Fukuda¹, Masahiro Kato¹, Noburu Fukushima¹ (Toshiba Corporation¹, LANL²)

4:45 PM - 5:00 PM

[19p-A26-12] Charge Transfer States of Eu³⁺ Centers in Ⅲ_a-O-Ⅶ_b-S（Ⅲ_a=Y,La、Ⅶ_b=F,Cl）Based Host Materials

^○Yoji Kageyama¹, Masahiro Okada¹, Tadashi Ishigaki^1,2, Koutoku Ohmi^1,2, Ryo Yoshimatsu³ (Tottori Univ.¹, TEDREC², Denka Ltd.³)

5:00 PM - 5:15 PM

[19p-A26-13] Photoluminescence properties of red-emitting Ca₂SiO₄:Eu²⁺ phosphors excited by blue-lights

^○Yasushi Sato¹, Hiroki Kuwahara², Hideki Kato², Makoto Kobayashi², Takaki Masaki³, Masato Kakihana² (Okayama Univ. Sci.¹, Tohoku Univ.², Sungkyunkwan Univ.³)

5:15 PM - 5:30 PM

[19p-A26-14] Synthesis and Luminescence Properties of La₆Si₄S₁₇ Host Materials and Ce-doped Phosphors.

^○(PC)Yasushi Nanai¹, Yu Murosaki¹, Tsuyoshi Okuno¹ (The Univ. of Electro-Communications¹)

5:30 PM - 5:45 PM

[19p-A26-15] The blue-excited yellow phosphor Y_6+(x/3)-yCa_ySi₁₁O_1-x+yN_20+x-y:Ce

Takatoshi Seto¹, ^○Takamasa Izawa¹ (SAMSUNG R&D INSTITUTE JAPAN¹)

5:45 PM - 6:00 PM

[19p-A26-16] Luminescence properties of Ca2TbZr2(AlO4)3:Ce3+ green phosphor

Natsuki Sato¹, ^○Shozo Oshio¹, Keiich Yamazaki¹ (Panasonic¹)

6:00 PM - 6:15 PM

[19p-A26-17] Luminescence properties of Ca₂TbZr₂(AlO₄)₃:Ce³⁺,Eu³⁺ red phosphor

^○Natsuki Sato¹, Shozo Oshio¹, Keiichi Yamazaki¹ (Panasonic¹)

6:15 PM - 6:30 PM

[19p-A26-18] Solution synthesis of (ZnCd)S:Mn nanoparticles using a 3-MPA surfactant

^○Naoki Doi¹, Tadashi Ishigaki², Hiroshi Okura³, Koutoku Ohmi^1,2 (Tottori Univ.¹, TEDREC², Merck Ltd.³)

6:30 PM - 6:45 PM

[19p-A26-19] Effects of Ga₂O₃ doping on the formation of Zn₃N₂ films during Reactive RF Sputtering

^○Jun-ichi Iwata¹, Yu Hirano¹, Hiroki Sase¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

Oral presentation

[20a-A26-1~9] 14.4 Optical properties and light-emitting devices

Sat. Sep 20, 2014 9:15 AM - 11:45 AM A26 (E319)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[20a-A26-1] Effects of calcination temperature on photoluminescence properties of SnO₂:Eu³⁺

^○(M2)Takaaki Arai¹, Sadao Adachi¹ (Gunma Univ.¹)

9:30 AM - 9:45 AM

[20a-A26-2] Synthesis and properties of Ga₂O₃:Tb³⁺, Eu³⁺ red phosphor

^○(B)Kenji Sawada¹, Sadao Adachi¹ (Gunma Univ.¹)

9:45 AM - 10:00 AM

[20a-A26-3] Crystal Growth and Optical Properties of Rare-Earth codoped SrAl₂O₄:Eu

^○Tomoya Ishibashi¹, Syouko Furukawa¹, Akio Yamanaka¹ (Chitose Institute of Science and Technology¹)

10:00 AM - 10:15 AM

[20a-A26-4] UV-CL of Gd³⁺ Doped YAlO₃ Thin Films Prepared by PLD Method

^○Yuhei Shimizu¹, Kazushige Ueda¹, Hiroshi Takashima², Yoshiyuki Inaguma³ (Kyushu Inst. Tech.¹, AIST², Gakushuin Univ.³)

10:15 AM - 10:30 AM

[20a-A26-5] Cathodoluminescence in Perovskite Films for RGB Colors

^○Hiroshi Takashima¹, Masayoshi Nagao¹, Kazushige Ueda² (AIST¹, KIT²)

10:30 AM - 10:45 AM

[20a-A26-6] Low-voltage emission observed for thin-film-type and powder-type Electroluminescence devices based on a perovskite-type oxide phosphor of Ca_0.6Sr_0.4TiO₃:Pr

^○Keiichi Ikegami¹, Mitsuko Aoki¹, Yukiya Hakuta¹, Yuuki Nakagawa², Noboru Miura², Hiroshi Takashima¹ (AIST¹, Meiji Univ.²)

Break 10:45～11:00 （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [20a-A26-7] Layer-by-Layer Assembly of YVO₄:Eu³⁺ Nanoparticles and Layered Double Hydroxide Nanosheets

^○Wataru Onishi¹, Satoru Takeshita¹, Tetsuhiko Isobe¹ (Keio Univ.¹)

11:15 AM - 11:30 AM

△ [20a-A26-8] Preparation of red-emitting Y₂O₃:Bi³⁺,Eu³⁺ nanosheets for near-UV excitation

^○Takuya Matsunaga¹, Satoru Takeshita¹, Tetsuhiko Isobe¹ (Keio Univ.¹)

11:30 AM - 11:45 AM

△ [20a-A26-9] Luminescence properties of new oxychloride compounds Ba₃RE₂X₂O₅

^○(M1)Makoto Tatsuda¹, HIraku Ogino¹, Jun-ichi Shimoyama¹, Yutaka Fujimoto³, Takayuki Yanagida², Kohji Kishio¹ (Univ. of Tokyo¹, Kyusyu Inst. Technol.², Tohoku Univ.³)

Oral presentation

[20p-A26-1~6] 14.4 Optical properties and light-emitting devices

Sat. Sep 20, 2014 1:00 PM - 2:30 PM A26 (E319)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:00 （11:45 AM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-A26-1] Analysis of Optical Properties and Substitution site for Pr³⁺-doped LaScO₃

^○(P)Shinta Watanabe¹, Kazuyoshi Ogasawara¹, Masahito Yoshino², Tomoaki Yamada², Takanori Nagasaki² (Kwansei Gakuin Univ.¹, Nagoya Univ.²)

1:15 PM - 1:30 PM

[20p-A26-2] Narrow Band Luminescence from Gd³⁺ defects in Ce:Gd₃Al₂Ga₃O₁₂crystals

^○Azusa Sato¹, Mamoru Kitaura², Kei Kamada³, Shunsuke Kurosawa^3,4, Akimasa Ohnishi², Minoru Sasaki², Kazuhiko Hara⁵ (Graduate School of Science and Engineering, Yamagata Univ.¹, Faculty of Science, Yamagata Univ.², NICHe, Tohoku Univ.³, IMR, Tohoku Univ.⁴, RIE, Shizuoka Univ.⁵)

1:30 PM - 1:45 PM

[20p-A26-3] Microwave response of rare-earth doped glass: Dynamics of “unluminescent” processes

^○Masashi Ishii¹, Shingo Fuchi², Yoshikazu Takeda³ (NIMS¹, Aoyama Univ.², NISRI³)

1:45 PM - 2:00 PM

[20p-A26-4] Luminescence spectrum control of Pr³⁺-doped glass phosphor by mixing of glass former oxide

^○Yusuke Shimizu¹, Keita Watanabe¹, Hiroki Uemura², Shingo Fuchi¹, Yoshikazu Takeda² (Aoyama Univ.¹, Aichi Science & Technology Foundation²)

2:00 PM - 2:15 PM

[20p-A26-5] Synthesis and evaluation of Mn⁴⁺-activated ZnGeF₆･6H₂O red phosphor

^○(M1)Ryosuke Hoshino¹, Sadao Adachi¹ (Gunma Univ.¹)

2:15 PM - 2:30 PM

[20p-A26-6] Effects of (Ce³⁺, Sn²⁺) codoping in KCl

^○Yuki Tosaka¹, Sadao Adachi¹ (Gunma Univ.¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

▲ [18a-A24-2] Growth and Characterization of Eu-Doped GaN by Low-Temperature Organometallic Vapor Phase Epitaxy

△ [18a-A24-3] Formation of new Eu optical center by Zn,O-codoping in Eu-doped GaN

△ [18a-A24-4] Enhancement of Eu photoluminescence intensity in Eu-doped GaN by Localized Surface Plasmon Resonance

△ [18a-A24-5] Characterization of energy transfer efficiency in Eu-doped GaN by two-wavelength excited photoluminescence

▲ [18a-A24-10] Structural Characterization and Luminescence Properties of ErxSc2-xSi2O7 Prepared by RF Sputtering

[18p-PB8-1~17] 14.4 Optical properties and light-emitting devices

△ [18p-PB8-5] Photoluminescence Properties of YAG:Ce3+ Nanoparticles/Polymer Composite Films

[19a-A26-1~12] 14.4 Optical properties and light-emitting devices

△ [19a-A26-4] Fabrication of silicon nanoparticles by a stirrer

△ [19a-A26-5] Valley-selective resonance optical excitation in compound semiconductors

△ [19a-A26-6] Observation of the sub-picosecond spin relaxation in InGaAsP bulk

△ [19a-A26-7] Spin relaxation in Zn doped GaAs grown by VGF method

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

▼ [19p-A26-5] Conditions and mechanism for crystal growth of Si-doped AlN powders

▲ [19p-A26-6] Cathodoluminescence of AlN:Mn2+

△ [19p-A26-9] Growth of GaSe crystals by liquid phase epitaxy under controlled Se vapor pressure and its evaluation

[20a-A26-1~9] 14.4 Optical properties and light-emitting devices

△ [20a-A26-7] Layer-by-Layer Assembly of YVO4:Eu3+ Nanoparticles and Layered Double Hydroxide Nanosheets

△ [20a-A26-8] Preparation of red-emitting Y2O3:Bi3+,Eu3+ nanosheets for near-UV excitation

△ [20a-A26-9] Luminescence properties of new oxychloride compounds Ba3RE2X2O5

[20p-A26-1~6] 14.4 Optical properties and light-emitting devices

△ [18p-PB8-5] Photoluminescence Properties of YAG:Ce³⁺ Nanoparticles/Polymer Composite Films

▲ [19p-A26-6] Cathodoluminescence of AlN:Mn²⁺

△ [20a-A26-7] Layer-by-Layer Assembly of YVO₄:Eu³⁺ Nanoparticles and Layered Double Hydroxide Nanosheets

△ [20a-A26-8] Preparation of red-emitting Y₂O₃:Bi³⁺,Eu³⁺ nanosheets for near-UV excitation

△ [20a-A26-9] Luminescence properties of new oxychloride compounds Ba₃RE₂X₂O₅