The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 1:45 PM - 6:45 PM A26 (E319)

2:45 PM - 3:00 PM

[19p-A26-5] Conditions and mechanism for crystal growth of Si-doped AlN powders

Yujin Cho1,2, Benjamin Dierre1, Takashi Takeda1, Kohsei Takahashi1, Naoki Fukata1,2, Naoto Hirosaki1, Takashi Sekiguchi1,2 (NIMS1, Tsukuba Univ.2)

Keywords:AlN,Si doping,Crystal growth