[19a-A26-1~12] 14.4 Optical properties and light-emitting devices

[19a-A26-1] [Young Scientist Oral Presentation Award Speech]（15min.）
Photoluminescence from highly n-doped, tensile-strained Ge-on-Insulator

^○Keisuke Nishida¹, Xuejun Xu¹, Koki Takabayashi¹, Keisuke Yoshida¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo city Univ.¹)

Keywords:シリコンフォトニクス,GOI,フォトルミネッセンス