The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[19p-A26-1~19] 14.4 Optical properties and light-emitting devices

Fri. Sep 19, 2014 1:45 PM - 6:45 PM A26 (E319)

3:45 PM - 4:00 PM

[19p-A26-9] Growth of GaSe crystals by liquid phase epitaxy under controlled Se vapor pressure and its evaluation

Kohei Suzuki1, Yuki Nagai1, Kunihiko Yamamoto1, Kensaku Maeda1, Kyosuke Saito1, Yutaka Oyama1 (Tohoku Univ.1)

Keywords:GaSe,テラヘルツ波,液相成長