The 75th JSAP Autumn Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18a-A24-1~13] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 9:00 AM - 12:30 PM A24 (E317)

11:15 AM - 11:30 AM

[18a-A24-9] Phase relaxation properties of hyperfine sublevels in 167Er3+ ions doped in an Y2SiO5 crystal

○Daisuke Hashimoto1, Kaoru Shimizu2 (NTT BRL1, NTT BRL2)

Keywords:位相緩和時間,Erイオン,超微細構造準位