The 75th JSAP Autumn Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

[18p-PB8-1~17] 14.4 Optical properties and light-emitting devices

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB8 (Gymnasium2)

ポスター掲示時間13:30~15:30(PB8会場)

1:30 PM - 3:30 PM

[18p-PB8-16] Preparation of Europium-doped GaN grown on GaAs(100) by radical nitrogen assisted compound-source MBE and conventional MBE

Yuki Koyama1, Shinji Yudate1, Akira Miyata1, Sho Shirakata1 (ehime Univ.1)

Keywords:GaN