[18a-S1-1~4] 8. Plasma Electronics

[18a-S1-2] [Plasma Electronics Award Speech]（30min.）
Modeling and Simulation of Plasma-Induced Damage Distribution during Hole Etching of SiO₂/ over Si Substrate by Fluorocarbon Plasma

^○Nobuyuki Kuboi¹, Tetsuya Tatsumi¹, Shoji Kobayashi¹, Takashi Kinoshita¹, Jun Komachi¹, Masanaga Fukasawa¹, Hisahiro Ansai¹ (SONY¹)

Keywords:ダメージ,エッチング,Si