The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

[18p-A17-1~12] 15.6 IV-group-based compounds

Thu. Sep 18, 2014 2:00 PM - 5:15 PM A17 (E308)

4:45 PM - 5:00 PM

[18p-A17-11] Erching Rate Behavior of SiC Wafer Using ClF3 Gas

○Ken Nakagomi1, Dairi Yajima1, Hitoshi Habuka1, Tomohisa Kato2 (Yokohama National Univ.1, AIST2)

Keywords:エッチング