[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

▲ [18p-A20-14] Formation of InAs quantum dots emitting at 1.55 micron using droplet epitaxy on metamorphic InAlAs/InAs/GaAs(111)A

^〇Neul Ha^1,2, Takaaki Mano¹, Xiangming Liu¹, Takashi Kuroda^1,2, Lazutaka Mitsuishi¹, Akihiro Ohtake¹, Takeshi Noda¹, Yoshiki Sakuma¹, Kazuaki Sakoda¹ (National Institute for Materials Science (NIMS)¹, Kyushu University²)

Keywords:InAs quantum dots,droplet epitaxy