[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

[18p-A20-16] Influence of InGaAs layer on photoluminescence of InAs quantum dots with AlAs cap

^○Xiangmeng Lu¹, Akihiro Kawaguchi¹, Yosinori Nakagawa^1,2, Naoto Kumagai¹, Takahiro Kitada¹, Toshiro Isu¹ (Univ. Of Tokushima¹, NICHIA Corporation²)

Keywords:quantum dot, MBE, photoluminescence