The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

6:15 PM - 6:30 PM

[18p-A20-19] Introduction of a GaP(As) layer into 1.3-μm InAs/GaAs quantum-dot structures

Katsuyuki Watanabe1, Takeo Kageyama2, Masahiro Kakuda2, Satoshi Iwamoto1,2, Yasuhiko Arakawa1,2 (IIS, Univ. of Tokyo1, NanoQuine, Univ. of Tokyo2)

Keywords:量子ドット,砒化インジウム,分子線エピタキシー