The 75th JSAP Autumn Meeting, 2014

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Oral presentation

15. Crystal Engineering » 15.3 III-V-group epitaxial crystals

[18p-A20-7~21] 15.3 III-V-group epitaxial crystals

Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)

3:30 PM - 3:45 PM

[18p-A20-9] Behavior of Ga atoms deposited on GaAs (111)B surface

○Atsushi Kawaharazuka1,2,3, Yoshiji Horikoshi1,2,3 (ZAIKEN1, Waseda Univ.2, JST-CREST3)

Keywords:MBE,GaAs,成長表面