3:30 PM - 3:45 PM
[18p-A20-9] Behavior of Ga atoms deposited on GaAs (111)B surface
Keywords:MBE,GaAs,成長表面
Oral presentation
15. Crystal Engineering » 15.3 III-V-group epitaxial crystals
Thu. Sep 18, 2014 3:00 PM - 7:00 PM A20 (E312)
3:30 PM - 3:45 PM
Keywords:MBE,GaAs,成長表面