Novel Overlaid Field Plate for Improvement of Drain I-V Characteristics of AlGaN/GaN HEMTs

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

2:00 PM - 2:15 PM

^○Suguru Mase¹, Takashi Egawa¹, Akio Wakejima¹ (Nagoya Institute of Technology¹)

Keywords:AlGaN,Field Plate