[18p-A22-1~15] 14.3 Electron devices and Process technology

[18p-A22-2] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (III)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

Keywords:InAlN,HEMT,MES