The 75th JSAP Autumn Meeting, 2014

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

4:30 PM - 4:45 PM

[18p-A22-10] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures

○Goh Kawaguchi1, Hirokuni Tokuda1, Masaaki Kuzuhara1 (Fukui Univ.1)

Keywords:AlGaN/GaN,移動度