4:15 PM - 4:30 PM
[18p-A22-9] Influence of InAlN Spacer on Electrical Properties of AlGaN/GaN and InAlN/GaN Heterostructure
Keywords:GaN HEMT
Presentation information
Oral presentation
14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology
[18p-A22-1~15] 14.3 Electron devices and Process technology
Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)