The 75th JSAP Autumn Meeting, 2014

Presentation information

Print

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

3:45 PM - 4:00 PM

△ [18p-A22-8] Study on temperature dependence of breakdown voltage in AlGaN/GaN HEMTs

○(PC)Kazuki Kodama1, Hirokuni Tokuda1, Masaaki Kuzahara1 (Univ. of Fukui1)

Keywords:衝突イオン化,バンド－準位間遷移,AlGaN/GaN HEMT