[18p-A22-1~15] 14.3 Electron devices and Process technology

[18p-A22-11] Investigation of heat dissipation in AlGaN/GaN HEMTs transferred to a copper plate using layered BN release layer

^○Masanobu Hiroki¹, Kazuhide Kumakura¹, Hideki Yamamoto¹ (NTT BRL¹)

Keywords:AlGaN/GaN HEMT,Transfer technique of semiconductor devices