[18p-A22-1~15] 14.3 Electron devices and Process technology

[18p-A22-12] Investigation on threshold voltage of GaN-based junctionless transistors by device simulation

^○Minjae Yoon¹, Akira Nakajima², Kuniyuki Kakushima¹, Yoshinori Kataoka¹, Akira Nishiyama¹, Hitoshi Wakabayashi¹, Kenji Natori¹, Kazuo Tsutsui¹, Nobuyuki Sugii¹, Hirosi Iwai¹, Shinichi Nishizawa², Hiromichi Ohasi² (Tokyo Tech.¹, AIST²)

Keywords:ジャンクションレス