Analyses of contact resistance factors on non-alloy contacts to 2DEG of AlGaN/GaN structures from dependence of AlGaN layer thickness on resistance

Yusuke Takei

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Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-A22-1~15] 14.3 Electron devices and Process technology

Thu. Sep 18, 2014 2:00 PM - 6:00 PM A22 (E314)

3:15 PM - 3:30 PM

[18p-A22-6] Analyses of contact resistance factors on non-alloy contacts to 2DEG of AlGaN/GaN structures from dependence of AlGaN layer thickness on resistance

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Tomohiro Shimoda¹, Youhei Mitsui¹, Wataru Saito², Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka¹, Hiroshi Iwai¹ (Tokyo Inst. Technology¹, Toshiba²)

Keywords:AlGaN,オーミックコンタクト,エッチング