Etching of InGaAs/GaAs layered structures by neutral beam etching for quantum dot laser applications

Cedric Thomas

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.2 Ultrathin films and quantum nanostructures

[18p-A27-1~17] 14.2 Ultrathin films and quantum nanostructures

Thu. Sep 18, 2014 2:00 PM - 7:00 PM A27 (N302)

4:00 PM - 4:15 PM

▲ [18p-A27-7] Etching of InGaAs/GaAs layered structures by neutral beam etching for quantum dot laser applications

^〇(PC)Cedric Thomas^1,5, Chang Yong Lee^1,5, Kenichi Yoshikawa^1,5, Akio Higo², Takayuki Kiba^3,5, Ichiro Yamashita^4,5, Akihiro Murayama^3,5, Seiji Samukawa^1,2,5 (Inst. of Fluid Science, Tohoku Univ.¹, WPI-AIMR, Tohoku Univ.², Hokkaido Univ.³, Nara Inst. of Info. and Technol.⁴, JST-CREST⁵)

Keywords:III-V compounds,neutral beam etching,quantum dots