[18p-A27-1~17] 14.2 超薄膜・量子ナノ構造

▲ [18p-A27-7] Etching of InGaAs/GaAs layered structures by neutral beam etching for quantum dot laser applications

^〇（PC）Cedric Thomas^1,5，Chang Yong Lee^1,5，Kenichi Yoshikawa^1,5，Akio Higo²，Takayuki Kiba^3,5，Ichiro Yamashita^4,5，Akihiro Murayama^3,5，Seiji Samukawa^1,2,5 (Inst. of Fluid Science, Tohoku Univ.¹，WPI-AIMR, Tohoku Univ.²，Hokkaido Univ.³，Nara Inst. of Info. and Technol.⁴，JST-CREST⁵)

キーワード：III-V compounds,neutral beam etching,quantum dots