BaTiO3- Bi(Mg2/3Nb1/3)O3 Epitaxial Thin-films for High-temperature Capacitors

Somu Kumaragurubaran

Presentation information

Oral presentation

Code-sharing session » 6.1/9.1 Code-sharing session

[18p-A9-1~17] 6.1/9.1 Code-sharing session

Thu. Sep 18, 2014 1:15 PM - 6:30 PM A9 (E208)

1:45 PM - 2:00 PM

[18p-A9-2] BaTiO₃- Bi(Mg_2/3Nb_1/3)O₃ Epitaxial Thin-films for High-temperature Capacitors

^〇Somu Kumaragurubaran¹, Takahiro Nagata¹, Kenichiro Takahashi², Sun-Gi Ri², Yoshifumi Tsunekawa², Setsu Suzuki², Toyohiro Chikyow¹ (National Institute for Materials Science (NIMS)¹, COMET Inc.²)

Keywords:Relaxor ferroelectric epitaxial thinfilms,High temperature dielectric capacitors

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Presentation information

[18p-A9-1~17] 6.1/9.1 Code-sharing session

[18p-A9-2] BaTiO3- Bi(Mg2/3Nb1/3)O3 Epitaxial Thin-films for High-temperature Capacitors

[18p-A9-2] BaTiO₃- Bi(Mg_2/3Nb_1/3)O₃ Epitaxial Thin-films for High-temperature Capacitors