[18p-C5-1~19] 15.4 III-V-group nitride crystals

[18p-C5-11] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique and thermal analysis

^○Ryo Kita¹, Ryo Hachiya¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

Keywords:窒化物半導体,ナノ,エッチング