4:45 PM - 5:00 PM
[18p-C5-11] Fabrication of GaN nanostructures by hydrogen environment anisotropic thermal etching (HEATE) technique and thermal analysis
Keywords:窒化物半導体,ナノ,エッチング
Oral presentation
15. Crystal Engineering » 15.4 III-V-group nitride crystals
Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)
4:45 PM - 5:00 PM
Keywords:窒化物半導体,ナノ,エッチング