Fabrication of Al-polar AlN layers by Liquid Phase Epitaxy using Ga-Al solution under low oxygen partial pressure

Ryuta Sekiya

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-C5-1~19] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

6:30 PM - 6:45 PM

[18p-C5-17] Fabrication of Al-polar AlN layers by Liquid Phase Epitaxy using Ga-Al solution under low oxygen partial pressure

^○(M1)Ryuta Sekiya¹, Masayoshi Adachi¹, Makoto Ohtsuka¹, Masashi Sugiyama², Junji Ida², Hiroyuki Fukuyama¹ (Tohoku Univ. IMRAM¹, Sumitomo Metal Mining Co. Ltd.²)

Keywords:AlN,LPE

« Previous in this session
Next in this session »

▲