[18p-C5-1~19] 15.4 III-V-group nitride crystals

△ [18p-C5-19] GaN lateral growth by liquid phase electro epitaxy using mesa-shaped template substrate

^○Hiroyuki Takakura¹, Masafumi Tomita¹, Daisuke Kambayashi¹, Muneki Iwakawa¹, Yousuke MIzuno¹, Jyumpei Yamada¹, Ryouta Yasui¹, Takahiro Maruyama¹, Shigeya Naritsuka¹ (Meijo Univ.¹)

Keywords:GaN,LPEE