[18p-C5-1~19] 15.4 III-V族窒化物結晶

▲ [18p-C5-4] High light-extraction efficiency induced by evanescent wave coupling effect in GaN-based light-emitting diodes

^○（P）Guodong Hao¹，Ahmed Mohammed Jahir¹，Tokio Takahashi¹，Mitsuaki Shimizu¹，Xue-Lun Wang¹，Hiroyuki Kishi²，Yukiko Hayashi²，Keigo Takeguchi² (AIST¹，Asahi Kasei Corp.²)

キーワード：light emitting diode,GaN, efficiency