The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-C5-1~19] 15.4 III-V-group nitride crystals

Thu. Sep 18, 2014 1:30 PM - 7:15 PM C5 (Open Hall)

4:15 PM - 4:30 PM

[18p-C5-9] Modulation spectroscopic investigation on internal electric fields in InGaN/GaN LEDs

Tomoyuki Tanikawa1,2, Ryuji Katayama1,2, Kanako Shojiki1, Shigeyuki Kuboya1, Takashi Matsuoka1,2, Yoshio Honda3, Hiroshi Amano3,4 (IMR, Tohoku Univ.1, JST-CREST2, Nagoya Univ.3, Akasaki Research Center4)

Keywords:窒化物半導体,エレクトロリフレクタンス,InGaN