[18p-C5-1~19] 15.4 III-V-group nitride crystals

△ [18p-C5-9] Modulation spectroscopic investigation on internal electric fields in InGaN/GaN LEDs

^○Tomoyuki Tanikawa^1,2, Ryuji Katayama^1,2, Kanako Shojiki¹, Shigeyuki Kuboya¹, Takashi Matsuoka^1,2, Yoshio Honda³, Hiroshi Amano^3,4 (IMR, Tohoku Univ.¹, JST-CREST², Nagoya Univ.³, Akasaki Research Center⁴)

Keywords:窒化物半導体,エレクトロリフレクタンス,InGaN