[18p-C6-1~17] 3.13 Semiconductor optical devices

△ [18p-C6-14] Ultra-broadband near-infrared light source using excited state emissions of multiple InAs quantum dots

^○(M2)Takuma Yasuda¹, Hiroshi Shibata¹, Shunsuke Ohkouchi², Naoki Ikeda³, Hirotaka Ohsato³, Eiichirou Watanabe³, Richard Hogg⁴, Nobuhiko Ozaki¹ (Wakayama Univ.¹, NEC Corp.², NIMS³, Univ. Sheffield⁴)

Keywords:近赤外光源,InAs量子ドット,光コヒーレンストモグラフィ