[18p-PA7-1~16] 6.3 Oxide-based electronics

[18p-PA7-9] Controlling resistivity of porous alumina as an insulator of ReRAM using electrochemical treatments and their current-voltage characteristics

^○Yusuke Tanimoto¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Shoso Shingubara², Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹, Kansai Univ.²)

Keywords:ReRAM,ポーラスアルミナ