Oral presentation

[17a-A10-1~11] 6.3 Oxide-based electronics

Wed. Sep 17, 2014 9:00 AM - 11:45 AM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[17a-A10-1] [JSAP Young Scientist Award Speech]（15min.）
Sodium Ion Diffusion in Layered Na_xCoO₂

^○Takayuki Shibata (University of Tsukuba)

9:15 AM - 9:30 AM

[17a-A10-2] Electrochemical Properties of O3-type NaCoO₂ thin film

^○Takayuki Shibata¹, Wataru Kobayashi^1,2, Yutaka Moritomo^1,2 (Univ. of Tsukuba¹, TIMS²)

9:30 AM - 9:45 AM

[17a-A10-3] Effect of post-annealing for LiCoO₂ film on glass substrate fabricated by pulsed laser deposition

^○Wataru Yano¹, Junpei Sugiura¹, Yo Ichikawa¹ (Nagoya Inst. of Tech.¹)

9:45 AM - 10:00 AM

▲ [17a-A10-4] Impedance Study of Eptaixial Li_3xLa_2/3-xTiO₃ Thin Films on Perovskite Substrates Deposited by Pulsed Laser Deposition

^○(D)Jie Wei¹, Tomoteru Fukumura^1,2, Yasushi Hirose^1,2,3, Tetsuya Hasegawa^1,2,3 (Univ. of Tokyo¹, JST-CREST², KAST³)

10:00 AM - 10:15 AM

[17a-A10-5] Dopant configuration analysis of YSZ from multivariable analysis combined with first principles calculations

^○Seiji Takemoto^1,2, Tomofumi Tada^1,2 (Tokyo TECH¹, JST-CREST²)

10:15 AM - 10:30 AM

[17a-A10-6] High-throughput DFT screening for two-dimensional electride materials

^○Tomofumi Tada¹, Seiji Takemoto¹, Satoru Matsuishi¹, Hideo Hosono¹ (Tokyo Tech., MCES¹)

10:30 AM - 10:45 AM

[17a-A10-7] Work Function Modulation in MgO/Nb:SrTiO3 Prepared by Room Temperature PLD

^○Tomofumi Susaki¹, Nobuhiro Shigaki¹, Kosuke Matsuzaki¹, Hideo Hosono^1,2 (MSL Tokyo Tech¹, FRC Tokyo Tech²)

10:45 AM - 11:00 AM

[17a-A10-8] Defect structures of off-stoichiometric SrTiO₃ films with change of growth conditions

^○Shunsuke Kobayashi^1,2, Takeharu Kato¹, Tsukasa Hirayama¹, Yuichi Ikuhara^1,3, Takahisa Yamamoto^1,2,4 (JFCC¹, Univ. Tokyo², Univ. Tokyo³, Nagoya Univ.⁴)

11:00 AM - 11:15 AM

[17a-A10-9] Fabrication of β-MoO₃(011) epitaxial thin films using DC magnetron sputtering

^○Ryota Shimizu¹, Kuniko Yamamoto¹, Tohru Suzuki¹, Takeo Ohsawa², Susumu Shiraki¹, Taro Hitosugi¹ (Tohoku Univ.¹, NIMS²)

11:15 AM - 11:30 AM

[17a-A10-10] Evaluation of energy-resolved distribution of the density of electron traps in titania powders by reversed double-beam photoacoustic spectroscopy

^○Akio NITTA¹, Mai TAKASE^1,2, Bunsho OHTANI^1,2 (Graduate School of Environmental Science, Hokkaido University¹, Catalysis Research Center, Hokkaido University²)

11:30 AM - 11:45 AM

[17a-A10-11] Photocatalytic effect of SrZnO₂ thin film

^○Tohru Okamoto¹, Yuji Kimura¹, Xinwei Zhao¹ (Tokyo Univ of Sci¹)

Oral presentation

[17p-A10-1~17] 6.3 Oxide-based electronics

Wed. Sep 17, 2014 1:15 PM - 5:45 PM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

△ [17p-A10-1] Growth and characterization of TiOx films

^○Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Tokyo Institute of Technology¹, Material Research Center for Element Strategy²)

1:30 PM - 1:45 PM

△ [17p-A10-2] Growth and physical properties of La₂TiFeO₆ double-perovskite films

^○Keisuke Watarai¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Tokyo Institute of Technology¹, MCES²)

1:45 PM - 2:00 PM

△ [17p-A10-3] Synthesis of Co oxyhydride thin films with perovskite structure

^○Tsukasa Katayama¹, Akira Chikamatsu^1,2, Hideyuki Kamisaka^1,2, Yasushi Hirose^1,2,3, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2,3 (The University of Tokyo¹, JST-CREST², KAST³)

2:00 PM - 2:15 PM

△ [17p-A10-4] Physical properties of layered Y₂O₂Bi epitaxial thin film with Bi²⁻ square net

^○Ryosuke Sei¹, Tomoteru Fukumura^1,2, Tetsuya Hasegawa^1,2 (Univ. of Tokyo¹, JST-CREST²)

2:15 PM - 2:30 PM

△ [17p-A10-5] Formation of V2O5-P2O5 glass-based printable semiconductor films and electrical junctions

^○Mengshen Liu¹, Akifumi Matsuda¹, Satoru Kaneko^1,2, Mamoru Yoshimoto¹ (Tokyo Inst. of Tech.¹, Kanagawa Ind. Tech. Center²)

2:30 PM - 2:45 PM

▼ [17p-A10-6] Demonstration of Dynamic Reconfiguration in a Crystalline IGZO-based Multi-Context FPGA

^○Nora Björklund^1,2, Yuki Okamoto¹, Takeshi Aoki¹, Munehiro Kozuma¹, Yoshiyuki Kurokawa¹, Takayuki Ikeda¹, Naoto Yamade¹, Yutaka Okazaki¹, Hidekazu Miyairi¹, Shunpei Yamazaki¹ (Semiconductor Energy Laboratory¹, Linkoping Univ.²)

2:45 PM - 3:00 PM

△ [17p-A10-7] Deep-UV Growth and ccathodoluminescence properties of LaGaO₃ epitaxial films

^○Akira Mukai¹, Takayoshi Oshima¹, Kohei Yoshimatsu¹, Shunsuke Fujii², Toshihisa Suyama², Akira Ohtomo^1,3 (Tokyo Tech.¹, Tokuyama Corp.², MCES³)

3:00 PM - 3:15 PM

△ [17p-A10-8] n-type or p-type SnOx films Deposited by Reactive Sputtering

^○Saki Yonekawa¹, Junjun Jia², Gloess Daniel¹, Yuzo Shigesato¹ (Aogaku Univ.¹, Fraunhofer Inst.²)

3:15 PM - 3:30 PM

△ [17p-A10-9] Fabrication and Characterization of MoS2 Phototransistor Structure

^○(M2)Soichiro Hirose¹, Takuhei Kobayashi¹, Takeshi Kawae², Akiharu Morimoto² (Grad. school of Natural Sci. & Tech. Kanazawa Univ.¹, College of Sci. & Eng. Kanazawa Univ.²)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[17p-A10-10] Electrical Conduction Control of Spinel-type (Fe,Ti)3O4 Films

^○Hiroyasu Yamahara¹, Masanao Takahashi¹, Munetoshi Seki¹, Hitoshi Tabata¹ (Univ. of Tokyo¹)

4:00 PM - 4:15 PM

[17p-A10-11] Electronic structure of Mn₃O₄ spinel and postspinel

^○Shigeto Hirai¹, Yosuke Goto², Yoichi Kamihara², Masanori Matoba² (HPSTAR¹, Keio Univ.²)

4:15 PM - 4:30 PM

[17p-A10-12] Estimation of transport dynamics in nanoscale phase-separated (La,Pr,Ca)MnO₃ using THz-TDS

^○Azusa Hattori¹, Anh Nguyen¹, Masaya Nagai², Takuro Nakamura¹, Kohei Fujiwara¹, Masaaki Ashida², Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹, Eng. Sci., Osaka Univ.²)

4:30 PM - 4:45 PM

[17p-A10-13] Electric-field effect on transition properties in nanoscale phase-separated (La,Pr,Ca)MnO₃ film

^○Takuro Nakamura¹, Azusa Hattori¹, Anh Ngyuen¹, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

4:45 PM - 5:00 PM

[17p-A10-14] STEM observation of oxygen octahedral distortions in a thin film of Mott-insulator manganites

^○Yasushi Ogimoto^1,2, Hideaki Teranishi¹, Chizuru Inoue¹, Daisuke Mori¹, Naoki Ogawa², Kenjiro Miyano^3,4, Yoshinori Tokura^2,5 (Fuji Electric Co., Ltd.¹, RIKEN CEMS², NIMS³, RCAST, Univ. of Tokyo⁴, Univ. of Tokyo⁵)

5:00 PM - 5:15 PM

[17p-A10-15] Epitaxial film growth of room temperature ferromagnet, Sr_4-xR_xCo₄O_10+d (R=Y,Er)

^○Takayoshi Katase¹, Yuki Suzuki¹, Michihiko Yamanouchi¹, Hidefumi Takahashi², Ryuji Okazaki², Ichiro Terasaki², Hiromichi Ohta¹ (RIES-Hokkaido Univ.¹, Nagoya Univ.²)

5:15 PM - 5:30 PM

[17p-A10-16] Fabrication and Electric / Magnetic Properties of [CaBO₃/ BiFe_1-xMn_xO₃](B=Fe, Mn) Superlattices Grown on the SrTiO₃(110) Substrates

Yuta Watabe¹, Takahiro Oikawa¹, Takaaki Inaba¹, Keisuke Oshima¹, Mark Huijben², Guus Rijnders², Takuya Hashimoto³, Kouichi Takase¹, Hiroshi Yamamoto¹, ^○Nobuyuki Iwata¹ (CST Nihon Univ.¹, IMS Univ. of Twente², CHS Nihon Univ.³)

5:30 PM - 5:45 PM

[17p-A10-17] Relation between electronic structure and magnetic/transition property of CuCrO₂

^○Ryo Kato¹, Mario Okawa¹, Hiroki Wadati², Teppei Yoshida³, Kozina Xeniya⁴, Eiji Ikenaga⁴, Kanta Ono⁵, Tetsuji Okuda⁶, Tomohiko Saitoh¹ (Dept. of Applied Phys., Tokyo Univ. of Science¹, ISSP, Univ. of Tokyo², Grad. School of Human and Environmental Studies, Kyoto Univ.³, JASRI/SPring-8⁴, KEK-PF⁵, Dept. of Electrical and Electronics Engineering, Kagoshima Univ.⁶)

Oral presentation

[18a-A10-1~10] 6.3 Oxide-based electronics

Thu. Sep 18, 2014 9:15 AM - 11:45 AM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:15 AM - 9:30 AM

[18a-A10-1] TiO₂-organic dielectric / Si heterojunction solar cell

^○Toru Yumoto¹, Toshiyuki Hirano¹, Akira Watanabe² (Asahi Kasei Corp.¹, IMRAM, Tohoku Univ.²)

9:30 AM - 9:45 AM

[18a-A10-2] Fabrication of Na doped NiO thin films for transparent solar cells

^○Tatsunori Yamaguchi¹, S Kim¹, Shuji Komuro², Xinwei Zhao¹ (Tokyo Univ of Sci.¹, Toyo Univ.²)

9:45 AM - 10:00 AM

[18a-A10-3] Characteristic evaluation of Cu₂O thin films prepared by electrodeposition

^○Genki Tsuji¹, Yuki Takiguchi¹, Shinsuke Miyajima¹ (Tokyo Tech¹)

10:00 AM - 10:15 AM

[18a-A10-4] Conduction band discontinuities of n-type oxide semiconductor/p-type Cu₂O heterojunctions

^○Yuki Nishi¹, Toshihiro Miyata¹, Tadatsugu Minami¹ (OEDS R&D Center, Kanazawa I. T.¹)

10:15 AM - 10:30 AM

[18a-A10-5] Relationship between electrical properties of thermally oxidized Cu2O sheets and obtained photovoltaic properties in heterojunction solar cells using the sheets

^○Toshihiro Miyata¹, Yuki Nishi¹, Tadatsugu Minami¹ (OEDS R&D Center, Kanazawa I. T.¹)

10:30 AM - 10:45 AM

△ [18a-A10-6] Semiconductor-photoelectrode properties of orientation-controlled α-Fe₂O₃ films

^○(D)Hisanori Mashiko¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Graduate School of Science and Engineering, Tokyo Tech.¹, TIES and MCES²)

10:45 AM - 11:00 AM

△ [18a-A10-7] Semiconductor-photoelectrode properties of LaFeO₃/SrTiO₃ heterostructures

^○(M1)Kentarou Nakamura¹, Hisanori Mashiko¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Graduate School of Science and Engineering, Tokyo Tech.¹, MCES²)

11:00 AM - 11:15 AM

△ [18a-A10-8] ZnO nanorod arrays grown on textured ZnO:Al transparent conducting films.

^○Yuuki Yamaguchi¹, Takahiro Yamaguchi¹, Yoshihiko Ninomiya¹, Atushi Sato¹, Naoomi Yamada¹ (Chubu Univ.¹)

11:15 AM - 11:30 AM

△ [18a-A10-9] Photoluminescence and photovoltaic propertiesof nanoparticle and nanotube TiO₂

^○Masaya Akimoto¹, Taro Toyoda^1,4, Tsuyoshi Okuno¹, Yuhei Ogomi^2,4, Shuzi Hayase^2,4, Kenji Yoshino^3,4, Qing Shen^1,4 (Univ. of Electro-commun.¹, Kyushu Inst. Tec.², Miyazaki Univ.³, JST-CREST⁴)

11:30 AM - 11:45 AM

△ [18a-A10-10] Fabrication of quantum well solar cells utilizing oxynitride semiconductor ZnInON

^○Koichi Matsushima^1,2, Ryota Shimizu¹, Tomoaki Ide¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki^1,3 (Kyushu Univ.¹, JSPS Reserch Fellow², JST-PRESTO³)

Poster presentation

[18p-PA7-1~16] 6.3 Oxide-based electronics

Thu. Sep 18, 2014 4:00 PM - 6:00 PM PA7 (Gymnasium1)

ポスター掲示時間16:00～18:00(PA7会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[18p-PA7-1] Fabrication of NiO-related transparent thin film transistor by RF reactive sputtering

Daisuke Kawade^1,2, ^○Ryo Sakai¹, Yasuyuki Watanabe^2,3, Shigefusa Chichibu⁴, Mutsumi Sugiyama^1,2 (Faculty of Sci. & Tech., Tokyo Univ. of Science¹, RIST, Tokyo Univ. of Science², Faculty of Tech, Tokyo Univ. of Science, Suwa³, IMRAM, Tohoku Univ.⁴)

4:00 PM - 6:00 PM

[18p-PA7-2] Investigation of Ga-In-O films grown on α-Al2O3 substrates by mist CVD growth

^○Keisuke Tanuma¹, Takumi Hatakeyama¹, Takeyoshi Onuma^1,2, Tomohiro Yamaguchi¹, Shigeyuki Kuboya³, Ryuji Katayama³, Takashi Matsuoka³, Tohru Honda¹ (Kogakuin Univ.¹, Tokyo National College of Technology², Tohoku Univ.³)

4:00 PM - 6:00 PM

[18p-PA7-3] Control of crystal orientation of LiCoO2 epitaxial thin films grown on metal single crystal substrates

^○susumu shiraki¹, yoshitaka takagi¹, masakazu haruta¹, Ryota Shimizu¹, Toru Suzuki¹, yukio sato², yuichi ikuhara^1,3,4, Taro Hitosugi¹ (Tohoku University¹, Kyushu University², University of Tokyo³, JFCC⁴)

4:00 PM - 6:00 PM

[18p-PA7-4] High Proton Conductivity in Sputtered BaZrY-O Thin Films

^○Takashi Nishihara¹, Yuji Zenitani¹, Tetsuya Asano¹, Hideaki Adachi¹, Akihiro Itou¹, Hiroki Takeuchi¹, Saifullah Badar¹, Hyunjeong Nam¹, Eiji Fujii¹ (Panasonic Corp.¹)

4:00 PM - 6:00 PM

▲ [18p-PA7-5] Electron-beam-induced current study of dislocation related defects in SrTiO3 crystal

^○Jun Chen¹, Jianyong Li², Wei Yi^1,3, Atsushi Ogura³, Takashi Sekiguchi¹ (NIMS¹, JST², Meiji Univ.³)

4:00 PM - 6:00 PM

[18p-PA7-6] The Formation of WO₃ and Its Application to Resistive Random Access Memory

^○(M1)Shota Takagi¹, Noritaka Ikeda¹, Tetsuji Arai¹, Keisuke Arimoto¹, Junji Yamanaka¹, Kiyokazu Nakagawa¹, Toshiyuki Takamatsu² (Yamanashi Univ.¹, SST Inc.²)

4:00 PM - 6:00 PM

[18p-PA7-7] Low-Temperature Fabrication Processes of p-Cu₂O/SiO_x/n-SiC pn-Diode-Structured Resistive Nonvolatile Memory

^○Atsushi Yamashita¹, Takahiro Tsukamoto¹, Yoshiyuki Suda¹ (Tokyo Univ. of Agric. & Technol.¹)

4:00 PM - 6:00 PM

[18p-PA7-8] Controlling resistive switching properties of conductive bridge memory by supplying ionic liquid

^○Ryosuke Ogata¹, Kohei Watanabe¹, Akinori Harada^1,2, Satoru Kishida^1,3, Toshiyuki Itoh¹, Kentaro Kinoshita^1,3 (Tottori Univ.¹, Kanto Denka Kogyo², Tottori Univ. Electronic Display Research Center³)

4:00 PM - 6:00 PM

[18p-PA7-9] Controlling resistivity of porous alumina as an insulator of ReRAM using electrochemical treatments and their current-voltage characteristics

^○Yusuke Tanimoto¹, Yoshihumi Hamada², Shintaro Otsuka², Tomohiro Shimizu², Shoso Shingubara², Tadataka Watanabe¹, Yoshiki Takano¹, Kouichi Takase¹ (Nihon Univ.¹, Kansai Univ.²)

4:00 PM - 6:00 PM

[18p-PA7-10] A scenario for the formation of a conducting-bridge based on first-principle calculations

^○Kentaro Kinoshita^1,2, Takahiro Yamasaki³, Takumi Moriyama¹, Takahisa Ohno^3,4, Satoru Kishida^1,2 (Tottori Univ.¹, TEDREC², NIMS³, IIS, Univ. of Tokyo⁴)

4:00 PM - 6:00 PM

[18p-PA7-11] Photocatalytic Activities of Co Doped SrTiO3 under Visible Light Irradiation

^○Fumihiko Ichihara¹, Hiroshi Ono¹, Choo Cheow-Keong², Katsumi Tanaka¹ (Univ. of Electro-Comunications¹, Center for International Programs and Exchange, Univ. of Electro-Comunications²)

4:00 PM - 6:00 PM

[18p-PA7-12] Photoelectrochemical properties with varying the porosity of a mesoporous CuxO and its application to photo rechargeable battery.

^○(M1C)Daiki Maeda¹, Teruaki Nomiyama¹, Yuji Horie¹ (Kagoshima Univ.¹)

4:00 PM - 6:00 PM

[18p-PA7-13] Pulsed laser deposition of niobium and niobium oxide by fourth harmonic Nd:YAG pulsed laser

^○Takaki Onozato¹, Koji Takamura², Motonori Nakamura³, Ken'ichi Yoshimoto⁴ (ANCT¹, ANCT², ANCT³, ANCT⁴)

4:00 PM - 6:00 PM

[18p-PA7-14] Preparation of LaSrMnO₃/BiFeO₃ Heterojunction

^○(M2)Tomohiro Ichinose¹, Hiroshi Naganuma¹, Mikihiko Oogane¹, Yasuo Ando¹ (Tohoku Univ.¹)

4:00 PM - 6:00 PM

[18p-PA7-15] The control of switching property in HfO₂-CB-RAM by the replacement of solvents

^○(M2)Masato Yoshihara¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

4:00 PM - 6:00 PM

▲ [18p-PA7-16] High-k oxide/organic polymer hybrid gate structure for oxide field-effect transistors

^○Tingting Wei^1,2, Kohei Fujiwara¹, Hidekazu Tanaka¹ (ISIR,Osaka Univ.¹, Kunming Sci.Tech.Univ.²)

Oral presentation

[19a-A10-1~10] 6.3 Oxide-based electronics

Fri. Sep 19, 2014 9:15 AM - 11:45 AM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:15 AM - 9:30 AM

[19a-A10-1] Low-temperature treatment of ITO using high-pressure unsaturated steam

^○Sota Hirahara¹, Hirotsugu Kitamura¹, Yusuke Uetake¹, Toshikatsu Nagasawa², Kei Igarashi², Kazuhiro Ohkawa¹ (Tokyo Univ. of Sci.¹, Hirayama Mfg. Co.²)

9:30 AM - 9:45 AM

[19a-A10-2] Conduction model in CVD-TiO₂ layer

^○Satoshi Yamauchi¹, Kazuhiro Ishibashi¹, Keisuke Tomida¹, Yoh Imai¹ (Ibaraki Univ.¹)

9:45 AM - 10:00 AM

[19a-A10-3] Basic studies of MgZnO thin films by nanomist deposition (NMD)

^○Junichi Ishino¹, Yoshiki Niinuma¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:00 AM - 10:15 AM

[19a-A10-4] Evaluation of ZnO thin film deposited by nanomist deposition (NMD)

^○Yoshiki Niinuma¹, Junichi Ishino¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:15 AM - 10:30 AM

[19a-A10-5] Application of indium zinc oxide-Ag-indium zinc oxide multilayer film toorganic light-emitting diodes

^○(M1)Tomoya Chiba¹, Yoshihisa Kudo¹, Midori Kawamura¹, Yoshio Abe¹, Kyung Ho Kim¹ (KIT¹)

10:30 AM - 10:45 AM

[19a-A10-6] Post annealing effect on AMZO/Ag(Al)/AMZO-DMD

^○Yukiko Sugimoto¹, Akihiko Kikuchi^1,2 (Sophia Univ.¹, Sophia Nanotechnology Research Center²)

10:45 AM - 11:00 AM

[19a-A10-7] Fabrication of Ga-doped ZnO thin films for transparent solar cellsⅢ

^○SangCheol Kim¹, Tatsunori Yamaguchi¹, Xinwei Zhao¹, Shuji Komuro² (Tokyo Univ of Sci.¹, Toyo Univ.²)

11:00 AM - 11:15 AM

[19a-A10-8] Optical characterization of ZnO/LiNbO₃/ZnO stacking structures for Pockels sensors

^○Housei Akazawa¹, Hiroshi Fukuda¹, Koji Yamada¹, Tai Tsuchizawa¹, Seiichi Itabashi¹, Masaru Shimada¹, Toshifumi Watanabe¹ (NTT MI Labs.¹)

11:15 AM - 11:30 AM

[19a-A10-9] Graphene transfer onto ZnO nanorods

^○Ryuji Okumura¹, Takamasa Ohkubo¹, Golap Kalita¹, Masaki Tanemura¹, Yo Ichikawa¹ (Nagoya Inst. of Tech.¹)

11:30 AM - 11:45 AM

[19a-A10-10] Structural and optical properties of Al and Cu doped ZnO nanorods

^○(M1)Tomoyuki Umakoshi¹, Zhuguang Jin¹, Kyung Ho Kim¹, Yoshio Abe¹, Midori Kawamura¹ (KIT¹)

Oral presentation

[19p-A10-1~22] 6.3 Oxide-based electronics

Fri. Sep 19, 2014 1:15 PM - 7:00 PM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

△ [19p-A10-1] Catalytic activities of perovskite-Mn oxide thin film for oxygen-reduction reaction

^○ryo kurosaki¹, daisuke kan¹, jun oyama², yuki orikasa², yoshiharu utimoto², yuichi shimakawa^1,3 (ICR, Kyoto Univ.¹, GSHES, Kyoto Univ.², JST-CREST³)

1:30 PM - 1:45 PM

△ [19p-A10-2] Reversible switching of superconducting-insulating states in LiTi₂O₄ using Li intercalation

^○Mifuyu Niwa¹, Kohei Yoshimatsu¹, Takayoshi Oshima¹, Akira Ohtomo^1,2 (Tokyo Tech¹, MCES²)

1:45 PM - 2:00 PM

△ [19p-A10-3] Electrostatic carrier doping on Cuprate infinite layer superconductor

^○(M2)Fumio Kiyokawa¹, Shogo Hayashi¹, Kazunori Ueno¹ (Tokyo Univ.Dept.Basic Science¹)

2:00 PM - 2:15 PM

△ [19p-A10-4] Metal-Insulator Transition by Carrier Doping into Sr₂IrO₄ Thin Films

^○Masato Ito^1,2, Masaki Uchida³, Yusuke Kozuka³, Kei Takahashi², Masashi Kawasaki^2,3 (IMR, Tohoku Univ.¹, CEMS, RIKEN², Univ. of Tokyo³)

2:15 PM - 2:30 PM

△ [19p-A10-5] Crystal Orientation Dependent Type of Charge Carriers in IrO₂

^○Masaki Uchida¹, Kei Takahashi², Yusuke Kozuka¹, Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (Dept. of Appl. Phys., the Univ. of Tokyo¹, CEMS, RIKEN²)

2:30 PM - 2:45 PM

[19p-A10-6] Thin Film Growth of IrO₂

^○Xiuyi Hou¹, Ryota Takahashi¹, Mikk Lippmaa¹ (ISSP, The Univ. of Tokyo¹)

2:45 PM - 3:00 PM

△ [19p-A10-7] Manipulation of Magnetic Domain Boundary and Interfacial Transport in Pyrochlore Iridate Heterostructure

^○Takahiro Fujita¹, Wataru Sano¹, Masaki Uchida¹, Yusuke Kozuka¹, Atsushi Tukazaki^2,3, Taka-hisa Arima^4,5, Masashi Kawasaki^1,5 (Dept. Appl. Phys., the Univ. of Tokyo¹, IMR, Tohoku Univ.², JST-PRESTO³, Dept. Adv. Mater. Sci., the Univ. of Tokyo⁴, CEMS, RIKEN⁵)

3:00 PM - 3:15 PM

△ [19p-A10-8] Tuning frustrated magnetism via tailoring ZnFe₂O₄/ZnCr₂O₄ superlattices

^○Tomoki Murata¹, Masaki Uchida¹, Yusuke Kozuka¹, Masashi Kawasaki^1,2 (Dept. of Appl. Phys., the Univ. of Tokyo¹, CEMS, RIKEN²)

3:15 PM - 3:30 PM

△ [19p-A10-9] Atomic-scale study of structural/electronic properties on a La_0.7Ca_0.3MnO₃ surface

^○Ryota Shimizu¹, Katsuya Iwaya², Takeo Ohsawa³, Shunya Nakamura⁴, Yasunobu Ando⁴, Emi Minamitani⁴, Satoshi Watanabe⁴, Taro Hitosugi^1,5 (Tohoku Univ.¹, RIKEN², NIMS³, Univ. Tokyo⁴, JST-PRESTO⁵)

3:30 PM - 3:45 PM

[19p-A10-10] First-principles calculation of structural/electronic properties on a La_0.75Ca_0.25MnO₃ surface

^○Shunya Nakamura¹, Yasunobu Ando¹, Emi Minamitani¹, Ryota Shimizu², Katsuya Iwaya³, Takeo Ohsawa⁴, Taro Hitosugi^2,5, Satoshi Watanabe¹ (Univ. Tokyo¹, Tohoku Univ.², Riken³, NIMS⁴, JST-PRESTO⁵)

3:45 PM - 4:00 PM

△ [19p-A10-11] Topological Hall effect in EuO thin films

^○Yuki Ohuchi¹, Masaki Uchida¹, Yusuke Kozuka¹, Kazunori Ueno^2,3, Atsushi Tsukazaki^2,4, Masashi Kawasaki^1,5 (Dept. of Applied Physics, the Univ. of Tokyo¹, Dept. of Basic Science, the Univ. of Tokyo², IMR, Tohoku Univ.³, JST-PRESTO⁴, CEMS, RIKEN⁵)

4:00 PM - 4:15 PM

△ [19p-A10-12] Oxygen octahedral tilt propagation in oxide heterostructures

^○Riko Sato¹, Daisuke Kan¹, Ryotaro Aso¹, Hiroki Kurata^1,2, Yuichi Shimakawa^1,2 (ICR, Kyoto Univ.¹, JST-CREST²)

Break 16:15～16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

△ [19p-A10-13] Control of the transition temperature of VO2 films by external-stress impression

^○Shyun Ando¹, Junjun Jia¹, Masaaki Imura², Toshimasa Kanai², Yuzo Shigesato¹ (Aoyama Gakuin Univ.¹, Nippon Electric Glass Co., Ltd.²)

4:45 PM - 5:00 PM

△ [19p-A10-14] Temperature dependence of thermal conductivity of VO₂ thin films across Metal-Insulator Transition

^○Hinako Kizuka¹, Takashi Yagi², Yuichiro Yamashita², Junjun Jia¹, Shinichi Nakamura¹, Naoyuki Taketoshi², Yuzo Shigesato¹ (Aoyama Gakuin Univ.¹, AIST²)

5:00 PM - 5:15 PM

[19p-A10-15] Evaluation of Non-Locality in Metal-to-Insulator Transition Using VO₂/W:VO₂ Heterostructures

^○Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (Univ. of Tokyo¹)

5:15 PM - 5:30 PM

[19p-A10-16] Maximization of conductive modulation by Electro-chemical ion doping into VO₂ nanowires using side gate-type FET structures and Evaluation of the dopant diffusion length

^○(M2)Tsubasa Sasaki¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

5:30 PM - 5:45 PM

[19p-A10-17] Reversible control of metal-insulator transition by local Peltier effect in VO₂ nanowires

Hidefumi Takami¹, ^○Teruo Kanki¹, Hidekazu Tanaka¹ (Osaka Univ.¹)

5:45 PM - 6:00 PM

[19p-A10-18] Evaluation of transport properties of VO₂ nanowires using a scanning probe microscope

^○(M1)Kotaro Sakai¹, Azusa Hattori¹, Teruo Kanki¹, hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

6:00 PM - 6:15 PM

[19p-A10-19] Correlation between TCR and thermal hysteresis width in doped VO2 films.

^○Kenichi Miyazaki¹, Shibuya Keisuke², Suzuki Megumi¹, Iwaki Takao¹, Wado Hiroyuki¹, Fujita Jun-ichi³, Sawa Akihito² (DENSO research lab.¹, AIST², Univ.Tsukuba³)

6:15 PM - 6:30 PM

[19p-A10-20] Growth of VO2 thin films on conductive TiN layer and out-of-plane IMT characteristics

^○Suruz Md.¹, Okimura Kunio¹ (Tokai Univ.¹)

6:30 PM - 6:45 PM

[19p-A10-21] The effect of substrate biasing on growth of vanadium dioxide thin film by reactive sputtering

^○Kui Su¹, BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

6:45 PM - 7:00 PM

[19p-A10-22] Selective growth of Wadsley phase V₆O₁₃ and VO₂(B) thin films on metal and Si substrate

^○BintiAzhan NurulHanis¹, Kunio Okimura¹ (Tokai Univ.¹)

Oral presentation

[20a-A10-1~10] 6.3 Oxide-based electronics

Sat. Sep 20, 2014 9:30 AM - 12:00 PM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 9:45 AM

[20a-A10-1] Investigation on Characteristic of Resistivity Change of MOD-Made BaTiO3 Thin Film

^○Shuhei Hashimoto¹, Ziyang Zhan¹, Kaoru Yamashita¹, Minoru Noda¹ (Kyoto Inst. Tech¹)

9:45 AM - 10:00 AM

[20a-A10-2] Annealing treatment dependence of resistive switching properties of the epitaxial Fe₃O_4-δ nanodots on Si substrate

^○(M2)Hideki Matsui¹, Yoshiaki Nakamura^1,2, Shotaro Takeuchi¹, Akira Sakai¹ (Osaka Univ.¹, PRESTO-JST²)

10:00 AM - 10:15 AM

[20a-A10-3] Resistance-Switching Properties of Mn-Nanodots embedded Si-rich Oxide Films

^○Takashi Arai¹, Akio Ohta², Katsunori Makihara¹, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL²)

10:15 AM - 10:30 AM

[20a-A10-4] Rational Concept for Designing Vapor-Liquid-Solid Growth of Metal Oxide Nanowire

Annop Klamchuen¹, ^○Takeshi Yanagida¹, Kazuki Nagashima¹, Masaki Kanai¹, Tomoji Kawai¹ (Osaka Univ¹)

10:30 AM - 10:45 AM

[20a-A10-5] Transient behavior in Pt/Nb-SrTiO₃ Schottky junctions

^○Daisuke Kan¹, Yuichi Shimakawa^1,2 (ICR Kyoto Univ¹, JST-CREST²)

10:45 AM - 11:00 AM

[20a-A10-6] The dependence of electrode materials on resistance switching effect for the same ReRAM filament

^○Sang-Gyu Koh¹, Satoru Kishida^1,2, kentaro Kinoshita^1,2 (Tottori Univ.¹, TEDREC²)

11:00 AM - 11:15 AM

△ [20a-A10-7] Pulse Switching Property of Reset Process in Tiny Resistive Random Access Memories

^○Takumi Moriyama¹, Sang-Gyu Koh¹, Ryosuke Koishi¹, Kouhei Kimura¹, Yusuke Echie¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

11:15 AM - 11:30 AM

△ [20a-A10-8] The forming process showing two kinds of modes in resistive switching cells based on NiO thin films

^○Hiroki Sasakura¹, Yusuke Nishi¹, Tatsuya Iwata¹, Tsunenobu Kimoto¹ (Kyoto Univ.¹)

11:30 AM - 11:45 AM

[20a-A10-9] Strain field dependence of the electrochemical phenomena in NiO film

^○Issei Sugiyama¹, Yunseok Kim², Stephen Jesse³, Evgheni Strelcov³, Amit Kumar⁴, Vivek Shenoy⁵, Naoya Shibata¹, Takahisa Yamamoto^6,7, Sergei Kalinin³, Yuichi Ikuhara^1,7,8 (Univ. Tokyo¹, Sungyunkwan Univ.², ORNL³, Queen's Univ.⁴, Univ. Pennsylvania⁵, Nagoya Univ.⁶, JFCC⁷, Tohoku Univ.⁸)

11:45 AM - 12:00 PM

[20a-A10-10] Re-examination of the formation mechanism of a conducting-bridge in CB-RAM

^○(M2C)Yutaro Enomoto¹, Satoru Khisida^1,2, Kentaro Kinoshita^1,2 (Tottori Univ.¹, Tottori Univ. Electronic Display Research Center²)

Oral presentation

[20p-A10-1~8] 6.3 Oxide-based electronics

Sat. Sep 20, 2014 1:00 PM - 3:00 PM A10 (E214)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

Lunch 12:00～13:00 （12:00 PM - 1:00 PM）

1:00 PM - 1:15 PM

[20p-A10-1] Resistive Switching with Pt electrode / Epitaxial CeO2 Thin Films

^○Michiko Yoshitake¹, Mykhailo Chundak^1,2, Michal Vaclavu^1,2, Vladimir Matolin², Toyohiro Chikyow¹ (NIMS¹, Charles University in Prague²)

1:15 PM - 1:30 PM

▲ [20p-A10-2] Investigation of the NiGe bottom electrode in CeO₂ based ReRAM Devices

^○Jisong Jin¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hiroshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

1:30 PM - 1:45 PM

[20p-A10-3] Resistive Switching Characteristics of CeO_x/SiO₂ layers on n⁺- and p⁺-Si

^○(M1)Minori Sugiura¹, Mokhammad Hadi¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech FRC¹, Tokyo Tech IGSSE²)

1:45 PM - 2:00 PM

[20p-A10-4] Effect of Plasma-Assisted Reduction on Resistance Switching Behavior in Manganite Films

^○Toshihiro Nakamura¹, Masaki Yamada², Osamu Sakai² (Osaka Electro-Communication Univ.¹, Kyoto Univ.²)

2:00 PM - 2:15 PM

[20p-A10-5] Redox processes at Cu(Ag)/Ta₂O₅ interfaces and the impact of density of a Ta₂O₅ film on the forming process

^○Tohru Tsuruoka^1,2, Ilia Valov^3,4, Tsuyoshi Hasegawa^1,2, Rainer Waser^3,4, Masakazu Aono¹ (NIMS¹, JST-CREST², RWTH-Aachen³, FZ-Juelich⁴)

2:15 PM - 2:30 PM

[20p-A10-6] Effect of RESET voltage on SET switching time distribution of bipolar resistive switching in a tantalum oxide thin film

^○Yoshifumi Nishi^1,2, Stephan Menzel¹, Karsten Fleck¹, Ulrich Boettger¹, Rainer Waser¹ (RWTH Aachen¹, Toshiba R&D Center²)

2:30 PM - 2:45 PM

[20p-A10-7] Resistance switching using nano-gap electrodes on alumina film made by RF sputtering

^○Tatsuya Kanehira¹, Toru Miyabe¹, Atsuki Obuchi¹, Toshihiro Nakaoka¹ (Sophia Univ.¹)

2:45 PM - 3:00 PM

[20p-A10-8] Retention time of aluminum oxide ReRAM

^○Seiichi Kato¹, Seisuke Nigo¹, Giyuu Kido¹ (NIMS¹)

Sessions

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[17a-A10-1~11] 6.3 Oxide-based electronics

▲ [17a-A10-4] Impedance Study of Eptaixial Li3xLa2/3-xTiO3 Thin Films on Perovskite Substrates Deposited by Pulsed Laser Deposition

[17p-A10-1~17] 6.3 Oxide-based electronics

△ [17p-A10-1] Growth and characterization of TiOx films

△ [17p-A10-2] Growth and physical properties of La2TiFeO6 double-perovskite films

△ [17p-A10-3] Synthesis of Co oxyhydride thin films with perovskite structure

△ [17p-A10-4] Physical properties of layered Y2O2Bi epitaxial thin film with Bi2− square net

△ [17p-A10-5] Formation of V2O5-P2O5 glass-based printable semiconductor films and electrical junctions

▼ [17p-A10-6] Demonstration of Dynamic Reconfiguration in a Crystalline IGZO-based Multi-Context FPGA

△ [17p-A10-7] Deep-UV Growth and ccathodoluminescence properties of LaGaO3 epitaxial films

△ [17p-A10-8] n-type or p-type SnOx films Deposited by Reactive Sputtering

△ [17p-A10-9] Fabrication and Characterization of MoS2 Phototransistor Structure

[18a-A10-1~10] 6.3 Oxide-based electronics

△ [18a-A10-6] Semiconductor-photoelectrode properties of orientation-controlled α-Fe2O3 films

△ [18a-A10-7] Semiconductor-photoelectrode properties of LaFeO3/SrTiO3 heterostructures

△ [18a-A10-8] ZnO nanorod arrays grown on textured ZnO:Al transparent conducting films.

△ [18a-A10-9] Photoluminescence and photovoltaic propertiesof nanoparticle and nanotube TiO2

△ [18a-A10-10] Fabrication of quantum well solar cells utilizing oxynitride semiconductor ZnInON

[18p-PA7-1~16] 6.3 Oxide-based electronics

▲ [18p-PA7-5] Electron-beam-induced current study of dislocation related defects in SrTiO3 crystal

▲ [18p-PA7-16] High-k oxide/organic polymer hybrid gate structure for oxide field-effect transistors

[19a-A10-1~10] 6.3 Oxide-based electronics

[19p-A10-1~22] 6.3 Oxide-based electronics

△ [19p-A10-1] Catalytic activities of perovskite-Mn oxide thin film for oxygen-reduction reaction

△ [19p-A10-2] Reversible switching of superconducting-insulating states in LiTi2O4 using Li intercalation

△ [19p-A10-3] Electrostatic carrier doping on Cuprate infinite layer superconductor

△ [19p-A10-4] Metal-Insulator Transition by Carrier Doping into Sr2IrO4 Thin Films

△ [19p-A10-5] Crystal Orientation Dependent Type of Charge Carriers in IrO2

△ [19p-A10-7] Manipulation of Magnetic Domain Boundary and Interfacial Transport in Pyrochlore Iridate Heterostructure

△ [19p-A10-8] Tuning frustrated magnetism via tailoring ZnFe2O4/ZnCr2O4 superlattices

△ [19p-A10-9] Atomic-scale study of structural/electronic properties on a La0.7Ca0.3MnO3 surface

△ [19p-A10-11] Topological Hall effect in EuO thin films

△ [19p-A10-12] Oxygen octahedral tilt propagation in oxide heterostructures

△ [19p-A10-13] Control of the transition temperature of VO2 films by external-stress impression

△ [19p-A10-14] Temperature dependence of thermal conductivity of VO2 thin films across Metal-Insulator Transition

[20a-A10-1~10] 6.3 Oxide-based electronics

△ [20a-A10-7] Pulse Switching Property of Reset Process in Tiny Resistive Random Access Memories

△ [20a-A10-8] The forming process showing two kinds of modes in resistive switching cells based on NiO thin films

[20p-A10-1~8] 6.3 Oxide-based electronics

▲ [20p-A10-2] Investigation of the NiGe bottom electrode in CeO2 based ReRAM Devices

▲ [17a-A10-4] Impedance Study of Eptaixial Li_3xLa_2/3-xTiO₃ Thin Films on Perovskite Substrates Deposited by Pulsed Laser Deposition

△ [17p-A10-2] Growth and physical properties of La₂TiFeO₆ double-perovskite films

△ [17p-A10-4] Physical properties of layered Y₂O₂Bi epitaxial thin film with Bi²⁻ square net

△ [17p-A10-7] Deep-UV Growth and ccathodoluminescence properties of LaGaO₃ epitaxial films

△ [18a-A10-6] Semiconductor-photoelectrode properties of orientation-controlled α-Fe₂O₃ films

△ [18a-A10-7] Semiconductor-photoelectrode properties of LaFeO₃/SrTiO₃ heterostructures

△ [18a-A10-9] Photoluminescence and photovoltaic propertiesof nanoparticle and nanotube TiO₂

△ [19p-A10-2] Reversible switching of superconducting-insulating states in LiTi₂O₄ using Li intercalation

△ [19p-A10-4] Metal-Insulator Transition by Carrier Doping into Sr₂IrO₄ Thin Films

△ [19p-A10-5] Crystal Orientation Dependent Type of Charge Carriers in IrO₂

△ [19p-A10-8] Tuning frustrated magnetism via tailoring ZnFe₂O₄/ZnCr₂O₄ superlattices

△ [19p-A10-9] Atomic-scale study of structural/electronic properties on a La_0.7Ca_0.3MnO₃ surface

△ [19p-A10-14] Temperature dependence of thermal conductivity of VO₂ thin films across Metal-Insulator Transition

▲ [20p-A10-2] Investigation of the NiGe bottom electrode in CeO₂ based ReRAM Devices