[20p-A10-1~8] 6.3 Oxide-based electronics

[20p-A10-6] Effect of RESET voltage on SET switching time distribution of bipolar resistive switching in a tantalum oxide thin film

^○Yoshifumi Nishi^1,2, Stephan Menzel¹, Karsten Fleck¹, Ulrich Boettger¹, Rainer Waser¹ (RWTH Aachen¹, Toshiba R&D Center²)

Keywords:抵抗スイッチ,TaOx,RRAM