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06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[19p-A10-1~22] 6.3 Oxide-based electronics

Fri. Sep 19, 2014 1:15 PM - 7:00 PM A10 (E214)

5:15 PM - 5:30 PM

[19p-A10-16] Maximization of conductive modulation by Electro-chemical ion doping into VO₂ nanowires using side gate-type FET structures and Evaluation of the dopant diffusion length

^○(M2)Tsubasa Sasaki¹, Teruo Kanki¹, Hidekazu Tanaka¹ (ISIR, Osaka Univ.¹)

Keywords:VO2,二酸化バナジウム