The 75th JSAP Autumn Meeting, 2014

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13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-A15-1~9] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Fri. Sep 19, 2014 9:30 AM - 12:00 PM A15 (E306)

11:15 AM - 11:30 AM

[19a-A15-7] Origin of increase of point defect density around metal/Ge interfaces

○Shogo Sasaki1, Takashi Nakayama1 (Chiba Univ.1)

Keywords:germanium,界面,MIGS