[19a-A16-1~10] 15.5 IV-group crystals and IV-IV-group mixed crystals

△ [19a-A16-3] Evaluation of Stress Relaxation Profile Depending on Ge Concentration in Strained SiGe Nanostructures on Si or Ge Substrate by EBSP

^○Motohiro Tomita^1,2, Daisuke Kosemura¹, Koji Usuda³, Atsushi Ogura¹ (Meiji Univ.¹, JSPS Research Fellow DC², AIST GNC³)

Keywords:EBSP,歪Si,SiGe