「応用物理学会優秀論文賞受賞記念講演」（30分）<br>Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

10:30 〜 11:00

[19a-A17-6] 「応用物理学会優秀論文賞受賞記念講演」（30分）
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

^○諏訪智之¹，寺本章伸¹，熊谷勇喜¹，阿部健一¹，李翔¹，中尾幸久¹，山本雅士²，野平博司³，室隆桂之4⁴，木下豊彦⁴，須川成利¹，大見忠弘¹，服部健雄¹ (東北大¹，ステラケミファ²，都市大³，JASRI⁴)