[19a-A17-1~12] 13.2 Insulator technology

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A17 (E308)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [19a-A17-1] Evidence for Si up-diffusion during scavenging of interfacial SiO₂ in HfO₂/SiO₂/Si stack

^○(D)Xiuyan Li¹, Takeaki Yajima¹, Tomonori Nishimura¹, Kousuke Nagashio¹, Akira Toriumi¹ (Univ. of Tokyo¹)

9:15 AM - 9:30 AM

[19a-A17-2] Ferrolectric characteristics of HfO2 in Hf1-xZrxO2-HfO2 stack

^○Tomonori Nishimura¹, Takeaki Yajima¹, Kosuke Nagashio¹, Akira Toriumi¹ (The Univ. of Tokyo¹)

9:30 AM - 9:45 AM

[19a-A17-3] Molecular Dynamics Study on Dipole Layer Formation at high-k/SiO2 Interface: Replication of both positive and negative direction dipole layer

^○Kosuke Shimura¹, Masahiro Hashiguchi¹, Ryota Kunugi¹, Atsushi Ogura^3,5, Shinichi Satoh^4,5, Takanobu Watanabe^1,2,5 (Waseda Univ.¹, Waseda-INN², Meiji Univ.³, University of Hyogo⁴, JST-CREST⁵)

9:45 AM - 10:00 AM

[19a-A17-4] Flatband voltage measurements of Si-MOS capacitors with La₂O₃/HfO₂/SiO₂ multi-stacked gate dielectrics

^○Ryo Fukui¹, Yoshinori Nakamura¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Hitoshi Wakabayashi², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE²)

10:00 AM - 10:15 AM

[19a-A17-5] Origin of thermal instability and subsequent defect formation of La-silicate/Si gate stack

^○Yasushi Nakasaki¹, Misako Morota¹, Akira Takashima¹, Koichi Kato¹, Yuichiro Mitani¹ (Toshiba R&D Center¹)

Break 10:15～10:30 (10:15 AM - 10:30 AM)

10:30 AM - 11:00 AM

[19a-A17-6] [JSAP Paper Award Speech]（30min.）
Chemical Structure of Interfacial Transition Layer Formed on Si(100) and Its Dependence on Oxidation Temperature, Annealing in Forming Gas, and Difference in Oxidizing Species

^○Tomoyuki Suwa¹, Akinobu Teramoto¹, Yuki Kumagai¹, Kenichi Abe¹, Xiang Li¹, Yukihisa Nakao¹, Masashi Yamamoto², Hiroshi Nohira³, Takayuki Muro⁴, Toyohiko Kinoshita⁴, Shigetoshi Sugawa¹, Tadahiro Ohmi¹, Takeo Hattori¹ (Tohoku University¹, Stella Chemifa², Tokyo City University³, JASRI⁴)

11:00 AM - 11:15 AM

[19a-A17-7] Evaluation of Dielectric Constant that Deduced from Relaxation Energy at SiO₂/Si interfaces

^○Maho Moriya^1,3, Yuji Amano^2,3, Daisuke Kobayashi³, Tomoyuki Yamamoto¹, Kazuyuki Hirose³ (Waseda Univ.¹, Tokyo City Univ.², ISAS/JAXA³)

11:15 AM - 11:30 AM

[19a-A17-8] Study of the recovery rate obtained by molecular orbital calculation technique

^○Shuichiro Wakao^1,2, Kazuyuki Hirose², daisuke Kobayashi², Tomoyuki Yamamoto¹ (Waseda Univ¹, ISAS/JAXA²)

11:30 AM - 11:45 AM

△ [19a-A17-9] Optimization of SiN Composition Profile to Improve Erase-Retention Tradeoff in MONOS Memories

^○Shosuke Fujii¹, Haruka Kusai¹, Kiwamu Sakuma¹, Masato Koyama¹ (Toshiba¹)

11:45 AM - 12:00 PM

[19a-A17-10] Fabrication and Evaluation of SiO₂/Si Structures by Kr/O₂ Plasma Oxidation at Low Temperature

^○Yuta Fujikawa¹, Tomo Ueno¹, Yoshitaka Iwazaki¹ (Tokyo Univ. of Agri. & Tech.¹)

12:00 PM - 12:15 PM

△ [19a-A17-11] CO₂ Laser Annealing of Polysilazane Coated Film for Polycrystalline Silicon Thin Film Transistors.

^○Daisuke Hishitani¹, Masahiro Horita^1,2, Yasuaki Ishikawa^1,2, Yosuke Watanabe³, Hiroshi Ikenoue³, Yukiharu Uraoka^1,2 (NAIST¹, CREST², Kyushu univ.³)

12:15 PM - 12:30 PM

▲ [19a-A17-12] Improvement of S-factor method for evaluation of MOS interface state density

^○(D)Weili Cai^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST CREST²)