The 75th JSAP Autumn Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-A19-1~13] 13.3 Si Process・Interconnect・MEMS・Integration

Fri. Sep 19, 2014 9:00 AM - 12:30 PM A19 (E311)

10:15 AM - 10:30 AM

[19a-A19-6] Electrical Characterization of SiO2 Films with High Breakdown Voltage Deposited by RF Sputtering Using O2/Ar Mixture

Tatsuya Okada1, Kimihiko Imura1, Takashi Noguchi1 (Univ. Ryukyus1)

Keywords:ゲート絶縁膜,RFスパッタリング,薄膜トランジスタ