[19a-PB1-1~23] 6.2 Carbon-based thin films

[19a-PB1-14] High-rate homoepitaxial growth of boron-doped diamond (100) films by MPCVD using spherical cavity

^○Daiki Kaneta¹, Syunsuke Watanabe¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Hiromitu Kato^2,3, Hitoshi Umezawa², Satoshi Yamasaki^2,3, Osamu Ariyada⁴, Takao Inokuma¹ (Grad.School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST, CREST³, Arios Inc⁴)

Keywords:ダイヤモンド,ホウ素ドープ,高速成長