Oral presentation

[17a-A8-1~7] 6.2 Carbon-based thin films

Wed. Sep 17, 2014 10:00 AM - 11:45 AM A8 (E207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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10:00 AM - 10:15 AM

[17a-A8-1] High-rate homoepitaxial growth of diamond (100) films by MPCVD using spherical cavity

^○Shunsuke Watanabe¹, Ryusuke Morimoto¹, Daiki Kaneta¹, Norio Tokuda^1,2,3, Hiromitsu Kato^2,3, Hitoshi Umezawa^2,3, Satoshi Yamasaki^2,3, Osamu Ariyada⁴, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST,CREST³, Arios Inc⁴)

10:15 AM - 10:30 AM

[17a-A8-2] Reduction of Defect Formation in Homoepitaxial Diamond Film Growth

^○Tokuyuki Teraji¹ (NIMS¹)

10:30 AM - 10:45 AM

[17a-A8-3] Direct wafer fabrication using a high-quality HPHT IIa substrate

^○Yoshiaki Mokuno¹, Yukako Kato¹, Nobuteru Tsubouchi¹, Hideaki Yamada¹, Akiyoshi Chayahara¹, Shinichi Shikata¹ (AIST¹)

10:45 AM - 11:00 AM

△ [17a-A8-4] Highly-oriented heteroepitaxial diamond films grown on 3C-SiC(001) / Si(001) substrate by antenna-edge microwave plasma CVD

^○Junya Yaita^1,2, Takayuki Iwasaki^1,2,3, Meralys Natal⁴, Stephen Saddow⁴, Mutsuko Hatano^1,2,3 (Tokyo Tech¹, CREST², ALCA³, Univ. of South Florida⁴)

11:00 AM - 11:15 AM

△ [17a-A8-5] Defect propagation and facet control in epitaxial lateral overgrowth of diamond on Ir

^○Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (Aoyama Gakuin Univ.¹, TOPLAS ENGINEERING CO.²)

11:15 AM - 11:30 AM

[17a-A8-6] Doping to diamond by immersing solid source during plasma CVD growth

Takahiro Tamura¹, Takashi Yanase², Taro Nagahama³, ^○Toshihiro Shimada³ (Hokkaido Univ.¹, Hokkaido Univ.², Hokkaido Univ.³)

11:30 AM - 11:45 AM

▲ [17a-A8-7] Boron-doped superlattices and Bragg reflectors in diamond

^〇(PC)Alexandre Fiori¹, Jessica Bousquet^2,3, David Eon^2,3, Franck Omnes^2,3, Edith Bellet-Amalric⁴, Francois Jomard⁵, Etienne Bustarret^2,3 (NIMS¹, Grenoble Alpes Univ.², CNRS - Inst. NEEL³, CEA - INAC⁴, CNRS - GEMaC and Versailles Univ.⁵)

Oral presentation

[17p-A8-1~17] 6.2 Carbon-based thin films

Wed. Sep 17, 2014 1:15 PM - 6:00 PM A8 (E207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[17p-A8-1] Crystal Curvature of HPHT Diamond Single Crystals Measured by Synchrotron Radiation Monochromatic X-ray Topography

^○Makoto Kasu¹, Ryuichi Murakami¹, Satoshi Masuya¹, Kazuya Harada¹, Hotoshi Sumiya² (Saga Univ.¹, Sumitomo Electric.²)

1:30 PM - 1:45 PM

[17p-A8-2] X-ray topography study of diamond p+ (100) substrates

^○Shinya Ohmagari¹, Yukako Kato¹, Hitoshi Umezawa¹, Shin-ichi Shikata¹ (AIST Diamond Gr.¹)

1:45 PM - 2:00 PM

△ [17p-A8-3] Analysis of superconducting boron-doped diamond thin film using X-ray diffraction

^○Masanobu Shibata¹, Taisuke Kageura¹, Mitsuyasu Koga¹, Takahide Yamaguchi², Yoshihiko Takano², Hiroshi Kawarada¹ (Waseda Univ.¹, NIMS²)

2:00 PM - 2:15 PM

[17p-A8-4] Phase-contrast Microscopic Analysis of Defects in Diamond Epitaxial layer

^○Yukako Kato¹, Hitoshi Umezawa¹, Shin-ichi Shikata¹ (AIST¹)

2:15 PM - 2:30 PM

△ [17p-A8-5] Perfect selective alignment of NV center in diamond

^○(M2)Takahiro Fukui¹, Yuuki Doi¹, Takehide Miyazaki², Yoshiyuki Miyamoto², Hiromitsu Katou^2,3, Tsubasa Matsumoto^2,3, Toshiharu Makino^2,3, Satoshi Yamasaki^2,3, Ryuusuke Morimoto⁴, Norio Tokuda⁴, Mutsuko Hatano^3,5, Yuuki Sakagawa¹, Hiroki Morishita^1,3, Toshiyuki Tashima^1,3, Shinji Miwa^1,3, Yoshishige Suzuki^1,3, Norikazu Mizuochi^1,3 (Osaka Univ.¹, AIST², CREST³, Kanazawa Univ.⁴, Tokyo Tech.⁵)

2:30 PM - 2:45 PM

[17p-A8-6] Evaluation of the Yield for Silicon-Vacancy Center Formation by Low-energy Silicon Ion Implantation into Diamond

^○(M2)Syuto Tamura¹, Godai Koike¹, Takashi Tanii¹, Tokuyuki Teraji², Shinobu Onoda³, Takeshi Ohshima³, Fedor Jelezko⁴, E Wu⁵, Takahiro Shinada⁶, Junichi Isoya⁷, Liam P. McGuinness⁴, Lachlan Rogers⁴, Christoph Müller⁴, Boris Naydenov⁴, Liu Yan⁵ (Waseda Univ.¹, NIMS², JAEA³, Ulm Univ.⁴, ECNU⁵, AIST⁶, Univ. of Tsukuba⁷)

Break 14:45～15:00 （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

[17p-A8-7] Temperature-dependent efficiency of phosphorus incorporation in MPCVD diamond

^○(PC)Takashi Yamamoto¹, Satoshi Koizumi¹ (NIMS¹)

3:15 PM - 3:30 PM

[17p-A8-8] X-ray photoelectron spectroscopy analysis of phosphorus-doped diamond films grown on misoriented (001) substrate

^○(D)Hiroyuki Kawashima^1,2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^1,2,3 (Univ. of Tsukuba¹, AIST², JST/CREST³)

3:30 PM - 3:45 PM

[17p-A8-9] Reduction of contact resistance by planarization of n-type diamond surface

^○(P)Tsubasa Matsumoto^1,2,3, Hiroyuki Kawashima^1,2,4, Hiromitsu Kato^1,2, Daisuke Takeuchi^1,2, Satoshi Yamasaki^1,2,4 (AIST¹, CREST², Innovation school³, Univ. of Tsukuba⁴)

3:45 PM - 4:00 PM

[17p-A8-10] Currents and Emissions of Narrow-gap Contacts on Phosphorus-doped n-type Diamond

^○Yuki Kudo^1,2, Daisuke Takeuchi^1,2, Hiromitsu Kato^1,2, Toshiharu Makino^1,2, Masahiko Ogura^1,2, Hideyo Okushi^1,2, Satoshi Yamasaki^1,2,3 (AIST¹, CREST(JST)², Univ. of Tsukuba³)

4:00 PM - 4:15 PM

△ [17p-A8-11] Fabrication of Lateral p-n Junction on a (111) Substrate

^○Kazuki Sato¹, Takayuki Iwasaki^1,2,3, Maki Shikizu^1,3, Hiromitsu Kato^3,4, Toshiharu Makino^3,4, Masahiko Ogura^3,4, Daisuke Takeuchi^3,4, Satoshi Yamasaki^3,4, Mutsuko Hatano^1,2,3 (Tokyo Institute of Technology¹, ALCA², CREST³, AIST⁴)

4:15 PM - 4:30 PM

[17p-A8-12] Temperature dependence of deep ultraviolet emission in diamond light emitting diodes

^○Daisuke Kuwabara^1,2,3, Toshiharu Makino^2,3, Hiromitsu Kato^2,3, Daisuke Takeuchi^2,3, Masahiko Ogura^2,3, Hideyo Okushi^2,3, Satoshi Yamasaki^2,3 (Univ. of Tsukuba¹, ETRI, AIST², CREST/JST³)

Break 16:30～16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

△ [17p-A8-13] Recovered surface conduction under partially oxidized (111)diamond surface after vacuum annealing

^○Yuya Hayashi¹, Takeshi Hara¹, Yuji Seshimo¹, Tomohiro Hakamata¹, Wako Ono¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

5:00 PM - 5:15 PM

[17p-A8-14] Isotope analysis of diamond-surface passivation effect of H2O-grown ALD-Al2O3 films

^○Atsushi Hiraiwa¹, Tatsuya Saito², Akira Daicho², Hiroshi Kawarada² (Waseda Univ., INN¹, Waseda Univ., Fac. Sci. Eng.²)

5:15 PM - 5:30 PM

△ [17p-A8-15] Electric property of diamond surface covered by MBE grown SiO2

^○Takeshi Hara¹, Tomohiro Hakamata¹, Wako Ono¹, Yuji Seshimo¹, Yuya Hayasi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

5:30 PM - 5:45 PM

△ [17p-A8-16] Ohmic contact formation to p-type (111) diamond by post wet annealing

^○Takuma Minamiyama¹, Daisuke Miyata¹, Tatsuma Chonan¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST,CREST³)

5:45 PM - 6:00 PM

[17p-A8-17] Microstructure and electric properties of AlN/diamond (111) heterostructure

^○Masataka Imura¹, Jiangwei Liu¹, Liao Meiyong¹, Yasuo Koide¹, Takao Matsumoto², Naoya Shibata², Yuuichi Ikuhara² (NIMS¹, The Univ. of Tokyo²)

Oral presentation

[18a-A8-1~10] 6.2 Carbon-based thin films

Thu. Sep 18, 2014 9:00 AM - 11:45 AM A8 (E207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [18a-A8-1] WC/p-diamond interface reaction at 600 K for stable diodes

^〇(PC)Alexandre Fiori, Tokuyuki Teraji, Yasuo Koide (NIMS)

9:15 AM - 9:30 AM

[18a-A8-2] High-temperature and high-voltage characteristics of diamond Schottky diodes using Cu electrodes

^○Kenji Ueda¹, Keita Kawamoto¹, Masato Nishiwaki¹, Hidefumi Asano¹ (Nagoya Univ.¹)

9:30 AM - 9:45 AM

[18a-A8-3] Characterization of diamond MESFET operated at high temperature

^○Hitoshi Umezawa¹, Takeshi Matsumoto¹, Shin-ichi Shikata¹ (AIST¹)

9:45 AM - 10:00 AM

△ [18a-A8-4] High-temperature electric characteristics of ALD-Al₂O₃ films

^○Daisuke Matsumura¹, Tatsuya Saito¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

10:00 AM - 10:15 AM

△ [18a-A8-5] High Breakdown Voltage Characteristics of ALD-Al₂O₃ C-H Diamond MOSFETs

^○Yuya Kitabayashi¹, Tetsuya Yamada¹, Dechen Xu¹, Hidetoshi Tsuboi¹, Tatsuya Saito¹, Daisuke Matsumura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Break 10:15～10:30 （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[18a-A8-6] Vacuum Power Switch with Negative Electron Affinity of Diamond (4)

^○Daisuke Takeuchi^1,4,5, Daisuke Kuwabara^1,2,5, Toshiharu Makino^1,4,5, Hiromitsu Kato^1,4,5, Masahiko Ogura^1,4,5, Satoshi Koizumi^1,3,4,5, Hideyo Okushi^1,4,5, Hiromichi Ohashi^1,4,5, Satoshi Yamasaki^1,2,4,5 (AIST ETRI¹, Univ.of Tsukuba², NIMS³, ALCA(JST)⁴, CREST(JST)⁵)

10:45 AM - 11:00 AM

▼ [18a-A8-7] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor

^○Jiangwei Liu¹, Meiyong Liao¹, Mastaka Imura¹, Yasuo Koide¹ (National Institute for Materials Science¹)

11:00 AM - 11:15 AM

[18a-A8-8] Detection of High Energy Charged Particles by Diamond Schottky Barrier Diode

^○Shinobu Onoda¹, Yuya Kambayashi^1,2, Wataru Kada², Naoya Iwamoto¹, Takahiro Makino¹, Hitoshi Umezawa³, Yoshiaki Mokuno³, Shin-ichi Shikata³, Osamu Hanaizumi², Tomihiro Kamiya¹, Takeshi Ohshima¹ (JAEA¹, Gunma Univ.², AIST³)

11:15 AM - 11:30 AM

[18a-A8-9] Fabrication of diamond pin radiation detectors

^○(PC)Ryota Ohtani¹, Takashi Yamamoto¹, Takahiro Tadokoro², Katsunori Ueno², Keisuke Sasaki², Hitoshi Kuwabara², Masakatsu Tsubota³, Junichi H. Kaneko³, Satoshi Koizumi^1,4 (NIMS¹, Hitachi Ltd.², Hokkaido Univ.³, JST-CREST⁴)

11:30 AM - 11:45 AM

△ [18a-A8-10] Detection of ATP on Diamond Surface

^○Takuro Naramura¹, Miho Myodo¹, Masafumi Inaba¹, Yuichiro Ishiyama¹, Ruslinda A. Rahim¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (Waseda Univ.¹)

Oral presentation

[18p-A8-1~20] 6.2 Carbon-based thin films

Thu. Sep 18, 2014 1:15 PM - 7:00 PM A8 (E207)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-A8-1] [Young Scientist Oral Presentation Award Speech]（15min.）
In situ RHEED Study on Growth Process of Graphene by Low Pressure Chemical Vapor Deposition

^○Takuro Minato¹, Hitoshi Nakahara¹, Koji Asaka¹, Yahachi Saito¹ (Nagoya Univ.¹)

1:30 PM - 1:45 PM

[18p-A8-2] Formation of graphene and development of patterning method by the electron irradiation to the fullerene and measurement of electrical characteristics by hydrogen doped sample

^○Seiya Matsukawa¹, Tomoki Imamura¹, Kyota Matsuo¹, Masao Yoshioka¹, Hiroshi Kubota¹ (GSST Kumamoto Univ.¹)

1:45 PM - 2:00 PM

[18p-A8-3] Synthesis and Evaluation of Graphitic Carbon Nitride Films

^○Shiori Fujita¹, Hitoe Habuchi¹, Shunsaku Takagi¹, Hirofumi Takikawa² (Gifu Natl. Coll. Technol.¹, Toyohashi Univ. Technol.²)

2:00 PM - 2:15 PM

△ [18p-A8-4] The change of electrical resistivity due to various gas species of amorphous carbon nitride films prepared by reactive RF sputtering

^○Naoyuki Tamura¹, Masami Aono¹, Hisashi Miyazaki¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

2:15 PM - 2:30 PM

△ [18p-A8-5] Evaluation of Reversible Photo-induced Phenomena of Amorphous Carbon Nitride Films Using AC Bending Method

^○Tomo Harata¹, Masami Aono¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (NDA¹)

2:30 PM - 2:45 PM

[18p-A8-6] Observation of free radicals in the microwave discharge flow of C₆H₆/N₂ gas mixture

^○Akira Kojima¹, Haruhiko Ito¹ (Nagaoka Univ.¹)

2:45 PM - 3:00 PM

[18p-A8-7] Characterization of nitrogen-doped diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition

^○Masato Tsuchiya¹, Kouhei Magara¹, Kengo Tokuda¹, Hideki Nakazawa¹ (Hirosaki Univ.¹)

Break 15:00～15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:45 PM

[18p-A8-8] [INVITED]Development of functionalized carbon materials by surface chemical modification

^○Takako Nakamura¹ (AIST¹)

3:45 PM - 4:00 PM

△ [18p-A8-9] The soft X-ray irradiation effect of Si-containing DLC films

^○Ryo Imai¹, Tsuneo Suzuki², Kazuhiro kanda¹ (LASTI, Univ. of Hyogo¹, Nagaoka Univ. of Tech²)

4:00 PM - 4:15 PM

[18p-A8-10] Conduction type controlling of hydrogenated amorphous carbon by fluorine doping

^○Yusuke Terada¹, Katsuhiro Akimoto¹ (Tsukuba Univ.¹)

4:15 PM - 4:30 PM

[18p-A8-11] Nano-Controlled Doping into Diamondlike Carbon Films

^○Susumu Takabayashi¹, Hiroyuki Hayashi², Meng Yang², Shuichi Ogawa², Taiichi Otsuji¹, Yuji Takakuwa² (RIEC, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

4:30 PM - 4:45 PM

[18p-A8-12] Raman Analysis of Diamondlike Carbon Films (I): On the Curve-Fitting Analysis

^○Susumu Takabayashi¹, Hiroyuki Hayashi², Meng Yang², Shuichi Ogawa², Taiichi Otsuji¹, Yuji Takakuwa² (RIEC, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

4:45 PM - 5:00 PM

[18p-A8-13] Raman Analysis of Diamondlike Carbon Films (II): Relationship to the Electrical Characteristics

^○Susumu Takabayashi¹, Hiroyuki Hayashi², Meng Yang², Shuichi Ogawa², Taiichi Otsuji¹, Yuji Takakuwa² (RIEC, Tohoku Univ.¹, IMRAM, Tohoku Univ.²)

Break 17:00～17:15 （5:00 PM - 5:15 PM）

5:15 PM - 5:30 PM

[18p-A8-14] Characterization on optical constants of a-C:H films deposited by RFPECVD with different negative pulsed bias voltages

^○(D)XiaoLong Zhou¹, Sarayut Tunmee¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

5:30 PM - 5:45 PM

[18p-A8-15] Corrosion properties and surface morphology of a-C:H films corroded in sodium chloride solution at pH 2

^○Satoru Arakawa¹, Sarayut Tunmee¹, Xiaolong Zhou¹, Yasuyuki Nakaya¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

5:45 PM - 6:00 PM

▲ [18p-A8-16] Behaviors of optical and corrosion properties of a-C:H films at different thicknesses

^○(D)Sarayut Tunmee¹, Xiaolong Zhou¹, Yasuyuki Nagaya¹, Satoru Arakawa¹, Ikumi Toda¹, Keiji Komatsu¹, Shigeo Ohshio¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

6:00 PM - 6:15 PM

[18p-A8-17] A study on the corrosion resistance of hydrogenated amorphous carbon films under the applied voltage

^○Yasuyuki Nakaya¹, Sarayut Tunmee¹, XiaoLong Zhou¹, Keiji Komatsu¹, Ikumi Toda¹, Shigeo Ohshio¹, Hidetoshi Saitoh¹ (Nagaoka Univ. Tech.¹)

6:15 PM - 6:30 PM

[18p-A8-18] ¹³C and Deuterium isotopic effect on amorphous carbon film properties

^○Yutaro Suzuki¹, Tsuneo Suzuki², Kazuhiro Kanda³, Naoto Ohtake¹, Hiroki Akasaka¹ (Tokyo Inst. of Tech.¹, Nagaoka Univ. of Tech.², Univ. of Hyogo³)

6:30 PM - 6:45 PM

△ [18p-A8-19] DLC coating on a tube inner wall using nanopulse plasma CVD

^○(M2)Ryota Takamura¹, Masaki Inoue¹, Hiroki Akasaka¹, Naoto Ohtake¹ (Tokyo Inst.¹)

6:45 PM - 7:00 PM

[18p-A8-20] Evaluation technique of DLC films on biocompatibility

^○Haruna Tada¹, Yasufumi Mabuchi¹, Mai Hibino¹, Yasuharu Ohgoe¹, Masanori Hiratsuka², Kazuhide Ozeki³, Takumi Moriyama⁴, Ali Alanazi⁵, Hidetoshi Saitoh⁶, Naoki Fukata⁷, Hideki Nakamori², Nataliya Nabatoba-Gabain⁴, Masayuki Sakurai⁴, Keisuke Sato¹, Kenji Hirakuri¹, Yasuhiro Fukui¹ (Tokyo Denki University¹, NANOTEC Corporation², Ibaraki University³, HORIBA, Ltd⁴, King Saud University⁵, Nagaoka University of Technology⁶, National Institute for Materials Science⁷)

Poster presentation

[19a-PB1-1~23] 6.2 Carbon-based thin films

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB1 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB1会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PB1-1] Characterization of Electrical properties of DLC film Fabricated from CO source gas

^○Yuki Yasuoka¹, Toru Harigai¹, Hiroshi Furuta^1,2, akimitsu Hatta^1,2 (Kochi Univ. Technol.¹, Center for Nanotechnol., Research Inst., Kochi Univ. Technol.²)

9:30 AM - 11:30 AM

[19a-PB1-2] A Tool using the DLC Film for an Electron Microscope -Effect on Resolution of the Gap between Electron Transmission film and Samples-

^○Tomotaka Kozuki¹, Norio Nawachi² (Hiroshima Int'l. Univ.¹, Hiroshima Pref. Tech. Inst.²)

9:30 AM - 11:30 AM

[19a-PB1-3] Characterization of N-doped DLC Thin Films using Solid-State ¹³C and ¹H NMR

^○Yuma Murata¹, Choo Chew-keong², Hiroshi Ono¹, Daisuke Kuwahara¹, Katsumi Tanaka¹ (UEC¹, UEC²)

9:30 AM - 11:30 AM

[19a-PB1-4] Film Formation and Application of Graphitic Carbon Nitride

^○Hiroki Arazoe^1,2, Daigo Miyajima², Takuzo Aida^1,2 (Univ. Tokyo¹, RIKEN²)

9:30 AM - 11:30 AM

[19a-PB1-5] Fabrication of a-CN_x:H film by microwave discharge flow of C₆H₁₄/N₂ gas mixture

^○Kenya Hiramatsu¹, Haruhiko Ito¹, Hidetoshi Saitoh¹ (Nagaoka Univ. of Tech¹)

9:30 AM - 11:30 AM

[19a-PB1-6] Sticking probability of CN radicals with the discharge flow of the gas mixture of N₂ and organic vapor

^○Nobiyoshi Mogi¹, Hiroki Tsudome¹, Haruhiko Ito¹ (Nagaoka Univ. of Tech¹)

9:30 AM - 11:30 AM

[19a-PB1-7] Fabrication of a-CN_x:H films with high nitrogen content by RF plasma CVD

^○Kazuki Sakurai¹, Teppei Tsuda¹, Hidetoshi Saitoh¹, Haruhiko Ito¹ (Nagaoka Univ.of Tech¹)

9:30 AM - 11:30 AM

[19a-PB1-8] Analysis of dissociative excitation reaction of hexamethyldisilane in microwave discharge flow of Ar.

^○(M1)Saeki Syunsuke¹, Haruhiko Itou¹ (Nagaoka Univ. of Tech.¹)

9:30 AM - 11:30 AM

△ [19a-PB1-9] Evaluation of Electrical Characteristics of Iodine doped a-C:H Films

^○So Maeara¹, Naoaki Urasaki¹, Masaaki Yamazato¹, Akira Higa¹ (University of the Ryukyus¹)

9:30 AM - 11:30 AM

△ [19a-PB1-10] Iodine doping of amorphous carbon thin film by chemical doping

^○Naoaki Urasaki¹, So Maeara¹, Masaaki Ymazato¹, Akira Higa¹ (University of the Ryukyus¹)

9:30 AM - 11:30 AM

[19a-PB1-11] Generation and evaluation graphene on SiO2 modulation substrate

^○Tomoki Imamura¹, Kyouta Matsuo¹, Hiroki Nishiguchi¹, Takao Izaki¹, Seiya Matsukawa¹, Masao Yoshioka², Hiroshi Kubota^1,2 (Graduate School of Science and Technology, Kumamoto Univ.¹, Faculty of Engineering, Kumamoto Univ.²)

9:30 AM - 11:30 AM

[19a-PB1-12] Studies on the wiring patterning of graphene by the electron beam

^○(M1)Takao Izaki¹, Hiroki Nishiguchi¹, Tomoki Imamura¹, Keita Matsuo¹, Seiya Matsukawa¹, Hiroshi Kubota¹, Masao Yoshioka¹ (Graduate School of Science and Technology Kumamoto Univ.¹)

9:30 AM - 11:30 AM

[19a-PB1-13] Selective growth of highly-oriented large diamond on Si substrates

^○(M1)Kazuki Komiya¹, Ryuhei Kojima¹, Yuji Soma¹, Hideo Isshiki¹ (University of Electro-Communications¹)

9:30 AM - 11:30 AM

[19a-PB1-14] High-rate homoepitaxial growth of boron-doped diamond (100) films by MPCVD using spherical cavity

^○Daiki Kaneta¹, Syunsuke Watanabe¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, Hiromitu Kato^2,3, Hitoshi Umezawa², Satoshi Yamasaki^2,3, Osamu Ariyada⁴, Takao Inokuma¹ (Grad.School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST, CREST³, Arios Inc⁴)

9:30 AM - 11:30 AM

[19a-PB1-15] Selective formation of atomically flat diamond (111) surface by hydrogen plasma treatment

^○Hiroki Kuroshima¹, Norio Tokuda^1,2,3, Toshiharu Makino^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Kanazawa Univ¹, AIST², JST,CREST³)

9:30 AM - 11:30 AM

[19a-PB1-16] Electrical characteristics of semi-insulating CVD diamond (111) films

^○Takaki Mukose¹, Daiki Kaneta¹, Shunsuke Watanabe¹, Ryusuke Morimoto¹, Norio Tokuda^1,2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST, CREST³)

9:30 AM - 11:30 AM

[19a-PB1-17] Surface roughness evaluation of (100) diamond by wet anneal treatment

^○Daisuke Miyata¹, Takuma Minamiyama¹, Norio Tokuda^1,2,3, Daisuke Takeuchi^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, AIST², JST, CREST³)

9:30 AM - 11:30 AM

[19a-PB1-18] Electrical characteristics of MOS capacitor using ALD-Al₂O₃ film on wet-annealed diamond (111) surface

^○Akihiro Ueda¹, Daisuke Miyata¹, Norio Tokuda^1,2,3, Masataka Imura⁴, Yasuo Koide⁴, Masahiko Ogura^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad.school of Sci. & Tech Kanazawa Univ.¹, AIST², JST,CREST³, NIMS⁴)

9:30 AM - 11:30 AM

[19a-PB1-19] Fabrication of diamond MESFET by post wet anneal treatment

^○Kazuhiro Nakanishi¹, Takuma Minamiyama¹, Daisuke Miyata¹, Yushi Tsuji², Norio Tokuda^1,3,4, Masahiko Ogura^3,4, Satoshi Yamasaki^3,4, Akiharu Morimoto¹, Takashi Kawae¹, Takao Inokuma¹ (Grad. School of Natural Sci. & Tech. Kanazawa Univ.¹, College of Sci. & Eng. Kanazawa Univ.², AIST³, JST, CREST⁴)

9:30 AM - 11:30 AM

[19a-PB1-20] Hydrogen termination of diamond (111) surface in graphene-on-diamond

^○Tatstuma Chonan¹, Norio Tokuda^1,2,3, Masahiko Ogura^2,3, toshiharu Makino^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad School of Nature Sic. & Tech. Kanazawa Univ.¹, AIST², JST,CREST³)

9:30 AM - 11:30 AM

[19a-PB1-21] Consideration of Hot Carrier Transport Properties in Diamond Based on First Principle Calculations

^○Go Wakimura¹, Yoshinari Kamakura¹ (Osaka Univ.¹)

9:30 AM - 11:30 AM

[19a-PB1-22] Sliver coating to diamond powder

^○Toshiaki Iyama¹, Ryuji Oshima¹, Kanji Iizuka¹ (NIT¹)

9:30 AM - 11:30 AM

[19a-PB1-23] Heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/amorphous carbon and p-type silicon

Abdelrahman Zkria¹, Hiroki Gima¹, Sausan Al-Riyami², Mahmoud Shaban³, ^○Tsuyoshi Yoshitake¹ (Kyushu Univ.¹, German Univ. Techn.², Aswan Univ.³)

Sessions

06. Thin Films and Surfaces » 6.2 Carbon-based thin films

[17a-A8-1~7] 6.2 Carbon-based thin films

△ [17a-A8-4] Highly-oriented heteroepitaxial diamond films grown on 3C-SiC(001) / Si(001) substrate by antenna-edge microwave plasma CVD

△ [17a-A8-5] Defect propagation and facet control in epitaxial lateral overgrowth of diamond on Ir

▲ [17a-A8-7] Boron-doped superlattices and Bragg reflectors in diamond

[17p-A8-1~17] 6.2 Carbon-based thin films

△ [17p-A8-3] Analysis of superconducting boron-doped diamond thin film using X-ray diffraction

△ [17p-A8-5] Perfect selective alignment of NV center in diamond

△ [17p-A8-11] Fabrication of Lateral p-n Junction on a (111) Substrate

△ [17p-A8-13] Recovered surface conduction under partially oxidized (111)diamond surface after vacuum annealing

△ [17p-A8-15] Electric property of diamond surface covered by MBE grown SiO2

△ [17p-A8-16] Ohmic contact formation to p-type (111) diamond by post wet annealing

[18a-A8-1~10] 6.2 Carbon-based thin films

▼ [18a-A8-1] WC/p-diamond interface reaction at 600 K for stable diodes

△ [18a-A8-4] High-temperature electric characteristics of ALD-Al2O3 films

△ [18a-A8-5] High Breakdown Voltage Characteristics of ALD-Al2O3 C-H Diamond MOSFETs

▼ [18a-A8-7] Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor

△ [18a-A8-10] Detection of ATP on Diamond Surface

[18p-A8-1~20] 6.2 Carbon-based thin films

△ [18p-A8-4] The change of electrical resistivity due to various gas species of amorphous carbon nitride films prepared by reactive RF sputtering

△ [18p-A8-5] Evaluation of Reversible Photo-induced Phenomena of Amorphous Carbon Nitride Films Using AC Bending Method

△ [18p-A8-9] The soft X-ray irradiation effect of Si-containing DLC films

▲ [18p-A8-16] Behaviors of optical and corrosion properties of a-C:H films at different thicknesses

△ [18p-A8-19] DLC coating on a tube inner wall using nanopulse plasma CVD

[19a-PB1-1~23] 6.2 Carbon-based thin films

△ [19a-PB1-9] Evaluation of Electrical Characteristics of Iodine doped a-C:H Films

△ [19a-PB1-10] Iodine doping of amorphous carbon thin film by chemical doping

△ [18a-A8-4] High-temperature electric characteristics of ALD-Al₂O₃ films

△ [18a-A8-5] High Breakdown Voltage Characteristics of ALD-Al₂O₃ C-H Diamond MOSFETs