[17p-A8-1~17] 6.2 Carbon-based thin films

[17p-A8-6] Evaluation of the Yield for Silicon-Vacancy Center Formation by Low-energy Silicon Ion Implantation into Diamond

^○(M2)Syuto Tamura¹, Godai Koike¹, Takashi Tanii¹, Tokuyuki Teraji², Shinobu Onoda³, Takeshi Ohshima³, Fedor Jelezko⁴, E Wu⁵, Takahiro Shinada⁶, Junichi Isoya⁷, Liam P. McGuinness⁴, Lachlan Rogers⁴, Christoph Müller⁴, Boris Naydenov⁴, Liu Yan⁵ (Waseda Univ.¹, NIMS², JAEA³, Ulm Univ.⁴, ECNU⁵, AIST⁶, Univ. of Tsukuba⁷)

Keywords:単一光子源,Si-V,発光センター