[19a-PB1-1~23] 6.2 Carbon-based thin films

[19a-PB1-18] Electrical characteristics of MOS capacitor using ALD-Al₂O₃ film on wet-annealed diamond (111) surface

^○Akihiro Ueda¹, Daisuke Miyata¹, Norio Tokuda^1,2,3, Masataka Imura⁴, Yasuo Koide⁴, Masahiko Ogura^2,3, Satoshi Yamasaki^2,3, Takao Inokuma¹ (Grad.school of Sci. & Tech Kanazawa Univ.¹, AIST², JST,CREST³, NIMS⁴)

Keywords:ダイヤモンド,MOS構造,ウェットアニール